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P4KE550

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
Categorysemiconductor    Discrete semiconductor   
File Size36KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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P4KE550 Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL

ADVANCED INFORMATION
P4KE530 AND P4KE550
T
RANS
Z
ORB
™ TRANSIENT VOLTAGE SUPPRESSOR
Steady State Power -
1Watt
DO-204AL
Reverse Voltage -
530, 550 Volts
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Protects TOPSwitch
®
Glass Passivated Junction
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Exellent Clamping capability
Available in unidirectional only
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
MECHANICAL DATA
Case:
JEDEC DO-204AL molded plastic body over
passivated junction
Terminals:
Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
The color band denotes the cathode, which is
positive with respect to the anode under normal TVS
operation
Mounting Position:
Any
Weight:
0.012 ounce, 0.3 gram
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Dimensions are in inches and (millimeters)
Available in uni-directional only
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
P4KE530
P4KE550
UNITS
Steady state power dissipation
(NOTE 3)
Peak pulse power dissipation
(NOTE 1,2, FIG.1)
Minimum breakdown voltage at 100µA
Maximum clamping voltage at 300mA, 10/1000
µs
-
waveform
Stand-off voltage
Maximum DC reverse leakage current at V
WM
Typical temperature coefficient of V
(BR)
Typical capacitance
(NOTE 4)
Operating junction and storage temperature range
at 0V
at 200V
P
M(AV)
P
PPM
V
(BR)
Vc
V
WM
I
D
477
530
1.0
Minimum 300
550
660
495
5.0
650
75
45
-55 to +150
Watts
Watts
Volts
Volts
Volts
µA
mV°C
pF
°C
C
J
T
J
, T
STG
NOTES:
(1) Non-repetitive current pulse, per Fig.3 and derated above 25°C per - Fig. 2
(2) Peak pulse power waveform is 10/100µS
(3) Lead temperature at 75°C=T
L
(4) Measured at 1MHz
1/20/99

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P4KE550 P4KE530
Description 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
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