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E35A27VBR

Description
35 A, 20 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size93KB,1 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
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E35A27VBR Overview

35 A, 20 V, SILICON, RECTIFIER DIODE

E35A27VBR Parametric

Parameter NameAttribute value
MakerKEC
package instructionB-PF, 1 PIN
Contacts1
Manufacturer packaging codeB-PF
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XUPF-P1
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature215 °C
Minimum operating temperature-40 °C
Maximum output current35 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formPRESS FIT
Maximum repetitive peak reverse voltage20 V
surface mountNO
Terminal formPIN/PEG
Terminal locationUPPER
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
・Average
Forward Current : I
O
=35A.
・Zener
Voltage : 27V(Typ.)
E35A27VBS, E35A27VBR
STACK SILICON DIFFUSED DIODE
A
POLARITY
E35A27VBS (+ Type)
E35A27VBR (- Type)
K
H
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
Non-Repetitive Peak
Reverse Surge Current
(10mS)
Transient Peak Reverse
Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
I
F(AV)
I
FSM
I
RSM
V
RSM
V
RM
T
j
T
stg
RATING
35
300 (60Hz)
42
UNIT
A
A
A
G
B
J D
F
E I
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5
MAX
Φ12.75+0.09-0.00
_
Φ1.3
+ 0.04
_
4.2+ 0.2
_
8.0 + 0.2
TYP 0.5
_
Φ10.0
+ 0.2
_
0.4+ 0.1x45
8.5 MAX
0.2+0.1
_
28.35+ 0.5
B-PF
22
20
-40½215
-40½215
V
V
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Forward Voltage
Zener Voltage
Reverse Current
Transient Thermal Resistance
Breakdown Voltage
Temperature Coefficient
Reverse Leakage Current Under
High Temperature
Temperature Resistance
SYMBOL
V
F
V
Z
I
R
ΔV
F
V
br
α
T
HI
R
R
th
TEST CONDITION
I
FM
=100A
I
Z
=10mA
V
R
=20V
I
FM
=100A, I
M
=100mA, Pw=100mS
I
rsm
=42A, Pw=10mS
I
Z
=10mA
Ta=150℃, V
R
=20V
DC total junction to case
MIN.
-
24
-
-
-
-
-
-
TYP.
-
27
-
-
-
15.7
-
-
MAX.
1.10
29
0.2
70
34
-
100
0.8
UNIT
V
V
μ
A
mV
V
mV/℃
μ
A
℃/W
2002. 4. 16
Revision No : 4
1/1

E35A27VBR Related Products

E35A27VBR E35A27VBS
Description 35 A, 20 V, SILICON, RECTIFIER DIODE 35 A, 20 V, SILICON, RECTIFIER DIODE
Maker KEC KEC
package instruction B-PF, 1 PIN B-PF, 1 PIN
Contacts 1 1
Manufacturer packaging code B-PF B-PF
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-XUPF-P1 O-XUPF-P1
Maximum non-repetitive peak forward current 300 A 300 A
Number of components 1 1
Phase 1 1
Number of terminals 1 1
Maximum operating temperature 215 °C 215 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 35 A 35 A
Package body material UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND
Package form PRESS FIT PRESS FIT
Maximum repetitive peak reverse voltage 20 V 20 V
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location UPPER UPPER
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