NTE6400 & NTE6400A
Unijunction Transistor
Description:
The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable
“N” type negative resistance characteristic over a wide temperature range. A stable peak point volt-
age, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,
timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conven-
tional silicon or germanium transistors.
These devices are intended for applications where circuit economy is of primary importance.
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
RMS Power Dissipation, P
D
Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW
Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9mW/°C
RMS Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Emitter Current (T
J
= +150°C), I
E(peak)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage (T
J
= +150°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Interbase Voltage, V
BB
NTE6400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
NTE6400A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V
Operating Temperature Range, T
opr
Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +140°C
Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16°C/mW
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Intrinsic Standoff Ratio
NTE6400
NTE6400A
Interbase Resistance
Modulated Interbase Current
Emitter Reverse Current
NTE6400
NTE6400A
Peak Point Emitter Current
Valley Point Current
Base–One Peak Pulse Voltage
Symbol
η
Test Conditions
V
BB
= 10V, Note 1
Min
0.4
54
4
6.8
–
–
–
8
3
Typ
–
–
–
–
–
–
–
–
–
Max
0.80
0.67
12
30
12
1
25
–
–
µA
mA
V
kΩ
mA
µA
Unit
R
BBO
I
B2(MOD)
I
EO
V
BB
= 3V, I
E
= 0, Note 1
V
BB
= 10V, I
E
= 50mA
V
B2E
= 30V, I
B1
= 0
I
P
I
V
V
OB1
V
BB
= 25V
V
BB
= 20V, R
B2
= 100Ω
Note 1. The intristic standoff ratio,
η,
is essentially constant with temperature and interbase volt-
age. It is defined by the following equation:
V
P
=
η
V
BB
+
Where V
P
V
BB
T
j
200
T
j
= Peak point emitter voltage
= Interbase voltage
= Junction Temperature (Degrees Kelvin)
Note 2. The interbase resistance is nearly ohmic and increases with temperature in a well–defined
manner. The temperature coefficient at +25°C is approximately 0.8%/°C.
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260 (6.6)
Max
.500 (12.7)
Min
.018 (0.45) Dia
.210 (5.33) Dia Max
B2
B1
45°
Emitter
.031 (.793)
Embedded System
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