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BC848BMTF_Q

Categorysemiconductor    Discrete semiconductor   
File Size295KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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BC848BMTF_Q Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerFairchild
RoHSNo
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max30 V
Collector- Base Voltage VCBO30 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current0.1 A
Gain Bandwidth Product fT300 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current0.1 A
DC Collector/Base Gain hfe Min200
Height0.93 mm
Length2.92 mm
Minimum Operating Temperature- 65 C
PackagingReel
Pd - Power Dissipation310 mW
Factory Pack Quantity3000
Width1.3 mm
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BC848BMTF_Q Related Products

BC848BMTF_Q BC848C BC848AMTF BC848B BC848CMTF BC848A
Description Bipolar Transistors - BJT SOT-23 NPN GP AMP Bipolar Transistors - BJT SOT-23 NPN GP AMP Schottky Diodes u0026 Rectifiers 40V 1A Bipolar Transistors - BJT SOT-23 NPN GP AMP
Configuration Single SINGLE SINGLE SINGLE SINGLE SINGLE
Parts packaging code - SOT-23 SOT-23 SOT-23 SOT-23 SOT-23
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts - 3 3 3 3 3
Reach Compliance Code - unknown compliant unknown compliant unknown
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage - 30 V 30 V 30 V 30 V 30 V
Minimum DC current gain (hFE) - 420 110 200 420 110
JESD-30 code - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components - 1 1 1 1 1
Number of terminals - 3 3 3 3 3
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) - 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount - YES YES YES YES YES
Terminal form - GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location - DUAL DUAL DUAL DUAL DUAL
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) - 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz
Is it Rohs certified? - - conform to incompatible conform to incompatible
JESD-609 code - - e3 e0 e3 e0
Peak Reflow Temperature (Celsius) - - 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal surface - - Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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