NTE476
Silicon NPN Transistor
RF Power Output
Description:
The NTE476 is a silicon epitaxial NPN–planar transistor which employs a multi–emitter electrode de-
sign. This feature together with a heavily diffused base matrix located between the individual emitters
result in high RF current handling capability, high power gain, low base resistance and low output ca-
pacitance. This device is intended for use as a Class A, B or C amplifier and in oscillator and frequency
multiplier circuits.
Features:
D
Designed for VHF mobile and marine transmitters
D
High efficiency at maximum stability
D
Improved metallization to achieve extreme ruggedness
Absolute Maximum Ratings:
(T
A
= +25°C except where specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I
C
max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Dissipation at 25°C Stud, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23.2W
Thermal Resistance, Junction–to–Stud, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.54°C/W
Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to 200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to 200°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Dynamic Characteristics
Current Gain – Bandwidth Product
Output Capacitance
Functional Tests
Power Output
Power Gain (Class C)
Collector Efficiency (Class C)
P
OUT
P
g
η
V
CE
= 13.6V, f = 175MHz
12
4.77
80
–
–
–
–
–
–
W
dB
%
f
T
C
ob
I
C
= 100mA, V
CE
= 13.6V
V
CB
= 13.6V, I
E
= 0, f = 100kHz
–
–
350
–
–
45
MHz
pF
V
(BR)CEO
I
C
= 200mA, I
B
= 0, Note 1
V
(BR)CBO
I
C
= 500µA, I
E
= 0
V
(BR)EBO
I
E
= 2mA, I
C
= 0
I
CBO
V
CB
= 15V, I
E
= 0
18
36
4
–
–
–
–
–
–
–
–
0.25
V
V
V
mA
Symbol
Test Conditions
Min
Typ
Max Unit
Note 1. Pulsed thru a 25mH inductor.
RF/Wirelessly
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