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2N5823

CategoryDiscrete semiconductor    The transistor   
File Size317KB,3 Pages
ManufacturerCentral Semiconductor
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2N5823 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-92
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
JESD-609 codee0
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
2N5820 2N5822
2N5821 2N5823
NPN
PNP
w w w. c e n t r a l s e m i . c o m
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5820 series
devices are epoxy molded complementary silicon
small signal transistors manufactured by the epitaxial
planar process designed for general purpose amplifier
applications where a high collector current rating is
required.
MARKING: FULL PART NUMBER
TO-92-18R CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
VCES
VCEO
VEBO
IC
ICM
PD
PD
TJ, Tstg
JA
JC
70
70
60
5.0
750
1.0
625
1.5
-65 to +150
200
83.3
UNITS
V
V
V
V
mA
A
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=25V
ICBO
VCB=25V, TA=100°C
IEBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
fT
Cob
Cib
VEB=5.0V
IC=10μA
IC=10mA
IE=10μA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=2.0V, IC=500mA
VCE=2.0V, IC=2.0mA (2N5820, 21)
VCE=2.0V, IC=2.0mA (2N5822, 23)
VCE=2.0V,
VCE=2.0V,
VCE=2.0V,
IC=500mA (2N5820, 21)
IC=500mA (2N5822, 23)
IC=50mA, f=20MHz (2N5820, 21)
70
60
5.0
MAX
100
15
10
UNITS
nA
μA
μA
V
V
V
0.75
1.2
0.6
60
100
20
25
100
120
15
55
1.1
120
250
V
V
V
MHz
MHz
pF
pF
VCE=2.0V, IC=50mA, f=20MHz (2N5822, 23)
VCB=10V, IC=0, f=1.0MHz
VEB=0.5V, IE=0, f=1.0MHz
R2 (17-November 2014)

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