NTE2932
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D
Avalanche Rugged Technology
D
Rugged Gate Oxide Technology
D
Lower Input Capacitance
D
Improved Gate Charge
D
Extended Safe Operating Area
D
Lower R
DS
(on): 0.071Ω Typ
D
Lower Leakage Current: 10µA (Max) @ V
DS
= 200V
Absolute Maximum Ratings:
Drain–to–Source Voltage, V
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Drain Current, I
D
Continuous
T
C
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.3A
T
C
= +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130A
Total Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/°C
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V
Single Pulsed Avalanche Energy (Note 2), E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 605mJ
Avalanche Current (Note 1), I
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.3A
Repetitive Avalanche Energy (Note 1), E
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
L
. . . . . . . . . . . . . . +300°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.38°C/W
Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 2mH, I
AS
= 21.3A, V
DD
= 50V, R
G
= 27Ω, Starting T
J
= +25°C.
Note 3. I
SD
≤
32A, di/dt
≤
320A/µs, V
DD
≤
V
(BR)DSS
, Starting T
J
= +25°C.
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Gate Threshold Voltage
Gate–Source Leakage Forward
Gate–Source Leakage Reverse
Drain–to–Source Leakage Current
Symbol
BV
DSS
∆V
(BR)DSS
/ I
D
= 250µA
∆T
J
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
(Body Diode) Note 1
T
J
= +25°C, I
S
= 21.3A, V
GS
= 0V, Note 4
T
J
= +25°C, I
F
= 32A, di
F
/dt = 100A/µs,
Note 4
V
GS
= 10V, I
D
= 32A, V
DS
= 160V,
Note 4, Note 5
V
DD
= 100V
,
I
D
= 32A, R
G
= 6.2Ω,
Note 4, Note 5
V
DS
= 5V, I
D
= 250µA
V
GS
= 30V
V
GS
= –30V
V
DS
= 200V
V
DS
= 160V, T
C
= +150°C
Static Drain–Source ON Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain (“Miller”) Charge
V
GS
= 10V, I
D
= 10.65A, Note 4
V
DS
= 40V, I
D
= 10.65A, Note 4
V
GS
= 0V, V
DS
= 25V, f = 1MHz
Test Conditions
V
GS
= 0V, I
D
= 250µA
Min
200
–
2.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
–
0.24
–
–
–
–
–
–
16.64
2300
410
200
21
20
77
38
95
18
45.3
Max
–
–
4.0
100
–100
10
100
0.085
–
3000
475
230
50
50
160
90
123
–
–
Unit
V
V/°C
V
nA
nA
µA
µA
Ω
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–
–
–
–
–
–
–
–
203
1.52
21.3
130
1.5
–
–
A
A
V
ns
µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width = 250µs, Duty Cycle
≤
2%.
Note 5. Essentially independent of operating temperature.
Embedded System
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