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T640N16TOF

CategoryAnalog mixed-signal IC    Trigger device   
File Size238KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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T640N16TOF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionDISK BUTTON, O-XXDB-X3
Reach Compliance Codecompliant
Is SamacsysN
Nominal circuit commutation break time250 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage2.2 V
Maximum holding current300 mA
JESD-30 codeO-XXDB-X3
Maximum leakage current50 mA
On-state non-repetitive peak current9400 A
Number of components1
Number of terminals3
Maximum on-state current644000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current1450 A
Off-state repetitive peak voltage1600 V
Repeated peak reverse voltage1600 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T640N
= -40°C... T
Elektrische
T
Eigenschaften
vj
vj max
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
enndaten
repetitive peak forward off-state and reverse voltages
Vorwärts-Stossspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stossstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlasskennlinie
200 A
i
T
3200 A
on-state characteristic
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 60747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
th
5.Kennbuchstabe / 5 letter F
T
C
= 85 °C
T
C
= 55 °C,
θ
= 180°sin, t
P
= 10 ms
V
DRM
,V
RRM
1200
1400
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TAVM
I
TRMS
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200
1400
1300
1500
1600 V
1800 V
1600 V
1800 V
1700 V
1900 V
1250 A
644 A
920 A
1450 A
9400 A
8000 A
442 10³ A²s
320 10³ A²s
200 A/µs
1000 V/µs
T
vj
= +25°C... T
vj max
T
vj
= T
vj max
, i
T
= 2400 A
T
vj
= T
vj max
, i
T
= 600 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
T
V
(TO)
r
T
A=
B=
C=
D=
I
GT
V
GT
I
GD
V
GD
I
H
I
L
i
D
, i
R
max.
max.
2,15 V
1,19 V
0,8 V
0,5 mΩ
v
T
=
A
+
B
i
T
+
C
ln ( i
T
+
1)
+
D
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
i
T
T
vj
= 25 °C, v
D
= 12V
T
vj
= 25 °C, v
D
= 12V
T
vj
= T
vj max
, v
D
= 12V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 12V
T
vj
= 25°C, v
D
= 12V, R
GK
10
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
9,775E-01
2,642E-04
-8,379E-02
2,424E-02
max.
max.
max.
max.
max.
max.
max.
max.
max.
250 mA
2,2 V
10 mA
5 mA
0,25 V
300 mA
1200 mA
50 mA
4 µs
DIN IEC 60747-6
t
gd
T
vj
= 25 °C, i
GM
= 1 A, di
G
/dt = 1 A/µs
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2010-01-13
3.1
IFBIP D AEC / 2010-01-13, H.Sandmann
A 01/10
Seite/page
1/10

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Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
package instruction DISK BUTTON, O-XXDB-X3 DISK BUTTON, O-XXDB-X3 DISK BUTTON, O-XXDB-X3 DISK BUTTON, O-XXDB-X3 CHIP DISK BUTTON, O-XXDB-X3 DISK BUTTON, O-XXDB-X3
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
Number of terminals 3 3 3 3 2 3 3
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON SMT DISK BUTTON DISK BUTTON
surface mount YES YES YES YES YES YES YES
Maker Infineon Infineon Infineon Infineon - Infineon -
Configuration SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE
Maximum DC gate trigger current 250 mA 250 mA 250 mA 250 mA - 250 mA 250 mA
JESD-30 code O-XXDB-X3 O-XXDB-X3 O-XXDB-X3 O-XXDB-X3 - O-XXDB-X3 O-XXDB-X3
Number of components 1 1 1 1 - 1 1
Maximum operating temperature 125 °C 125 °C 125 °C - 155 °C - -
Minimum operating temperature -40 °C -40 °C -40 °C - -55 °C - -
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND ROUND ROUND - ROUND ROUND
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Maximum rms on-state current 1450 A 1450 A 1450 A 1450 A - 1450 A 1450 A
Off-state repetitive peak voltage 1600 V 1400 V 1200 V 1800 V - 1200 V 1600 V
Repeated peak reverse voltage 1600 V 1400 V 1200 V 1800 V - 1200 V 1600 V
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED
Terminal location UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR SCR SCR - SCR SCR
Base Number Matches 1 1 1 - - - 1
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