SPB30N03 datasheet, PDF - EEWORLD Datasheet

SPB30N03: DescriptionSIPMOS Power Transistor; CategoryDiscrete semiconductor The transistor; File Size564KB，14 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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SPB30N03 Overview

SIPMOS Power Transistor

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Parts packaging code	TO-263
package instruction	PLASTIC, TO-263, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	145 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	30 A
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.023 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	120 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

	SPB30N03	SPP30N03
Description	SIPMOS Power Transistor	SIPMOS Power Transistor
Is it Rohs certified?	incompatible	incompatible
Maker	Infineon	Infineon
Parts packaging code	TO-263	SFM
package instruction	PLASTIC, TO-263, 3 PIN	PLASTIC, TO-220, 3 PIN
Contacts	3	3
Reach Compliance Code	_compli	unknow
ECCN code	EAR99	EAR99
Other features	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	145 mJ	145 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (Abs) (ID)	30 A	30 A
Maximum drain current (ID)	30 A	30 A
Maximum drain-source on-resistance	0.023 Ω	0.023 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSFM-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	75 W	75 W
Maximum pulsed drain current (IDM)	120 A	120 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

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