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SPP30N03

Description
SIPMOS Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size564KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

SPP30N03 Overview

SIPMOS Power Transistor

SPP30N03 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeSFM
package instructionPLASTIC, TO-220, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)145 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.023 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON

SPP30N03 Related Products

SPP30N03 SPB30N03
Description SIPMOS Power Transistor SIPMOS Power Transistor
Is it Rohs certified? incompatible incompatible
Maker Infineon Infineon
Parts packaging code SFM TO-263
package instruction PLASTIC, TO-220, 3 PIN PLASTIC, TO-263, 3 PIN
Contacts 3 3
Reach Compliance Code unknow _compli
ECCN code EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 145 mJ 145 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (Abs) (ID) 30 A 30 A
Maximum drain current (ID) 30 A 30 A
Maximum drain-source on-resistance 0.023 Ω 0.023 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSSO-G2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 75 W 75 W
Maximum pulsed drain current (IDM) 120 A 120 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
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