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2N4400 / MMBT4400
2N4400
MMBT4400
C
E
C
B
TO-92
E
SOT-23
Mark: 83
B
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
60
6.0
600
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N4400
625
5.0
83.3
200
Max
*MMBT4400
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
©
2001 Fairchild Semiconductor Corporation
2N4400/MMBT4400, Rev A
2N4400 / MMBT4400
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
V
CE
= 35 V, V
EB
= 0.4 V
V
CE
= 35 V, V
EB
= 0.4 V
40
60
6.0
0.1
0.1
V
V
V
µA
µA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
V
CE
= 1.0 V, I
C
= 150 mA
V
CE
= 2.0 V, I
C
= 500 mA
I
C
= 150 mA, I
B
=15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
=15 mA
I
C
= 500 mA, I
B
= 50 mA
20
40
50
20
150
0.40
0.75
0.95
1.2
V
V
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.75
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
h
fe
h
ie
h
re
h
oe
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Small-Signal Current Gain
Input Impedance
Voltage Feedback Ratio
Output Admittance
V
CB
= 5.0 V, f = 140 kHz
V
EB
= 0.5 V, f = 140 kHz
I
C
= 20 mA, V
CE
= 10 V,
f = 100 MHz
V
CE
= 10 V, I
C
= 1.0 mA,
f = 1.0 kHz
2.0
20
0.5
0.1
1.0
250
7.5
8.0
30
KΩ
x 10
-4
6.5
30
pF
pF
µmhos
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA ,V
EB
= 2 V
V
CC
= 30 V, I
C
= 150 mA
I
B1
= I
B2
= 15 mA
15
20
225
30
ns
ns
ns
ns
*
Pulse Test: Pulse Width
£
300
ms,
Duty Cycle
£
2.0%
2N4400 / MMBT4400
NPN General Purpose Amplifier
(continued)
Typical Characteristics
500
V
CE
= 5V
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β
= 10
0.3
400
300
200
25 °C
125 °C
0.2
25 °C
125 °C
100
- 40 °C
0.1
- 40 °C
0
0.1
0.3
1
3
10
30
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
V
BE(ON)
- BASE-EMITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
- 40 °C
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
0.8
- 40 °C
25 °C
0.8
25 °C
125 °C
0.6
125 °C
0.6
0.4
0.4
1
I
C
10
100
- COLLECTOR CURRENT (mA)
500
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
500
100
10
1
0.1
V
CB
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20
CAPACITANCE (pF)
16
12
C
te
= 40V
f = 1 MHz
8
C ob
4
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
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