General Purpose Transistor
BC856-HF Thru. BC858-HF Series
(PNP)
RoHS Device
Halogen Free
Features
- Ideally suited for automatic insertion
- Power dissipation
P
CM
: 0.25W (@T
A
=25°C)
- Low current.(max. 100mA)
- Collector-base voltage
V
CBO
: BC856 = -80V
BC857 = -50V
BC858 = -30V
- Operating and storage junction temperature
range: T
J
, T
STG
= -65 to +150°C
0.059(1.50)
0.043(1.10)
SOT-23
0.122(3.10)
0.106(2.70)
3
1
0.079(2.00)
0.071(1.80)
2
0.004(0.10)
Typ.
Mechanical data
- Case: SOT-23, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
0.039(1.00)
Typ.
0.102(2.60)
0.087(2.20)
0.004(0.10)
0.001(0.02)
0.016(0.40)
Typ.
Circuit diagram
- 1.BASE
- 2.EMITTER
- 3.COLLECTOR
1
3
Dimensions in inches and (millimeter)
2
Maximum Ratings
(at Ta=25°C unless otherwise noted)
Parameter
BC856
BC857
BC858
BC856
BC857
BC858
Symbol
Value
-80
-50
-30
-65
-45
-30
-5
-0.1
250
-65 to +150
-65 to +150
Unit
Collector-Base voltage
V
CBO
V
Collector-Emitter voltage
V
CEO
V
Emitter-Base voltage
Collector current-continuous
Collector dissipation
Junction temperature range
Storage temperature range
V
EBO
I
C
P
C
T
J
T
STG
V
A
mW
°C
°C
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QW-JTR16
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Comchip Technology CO., LTD.
General Purpose Transistor
Electrical Characteristics (T
A
= 25°C unless otherwise specified)
Parameter
BC856
BC857
BC858
BC856
BC857
BC858
Symbol
Test Conditions
MIN
-80
-50
-30
-65
-45
-30
-5
TYP
MAX
Unit
Collector-Base breakdown voltage
V
(BR)CBO
I
C
= -10μA , I
E
=0
V
Collector-Emitter breakdown voltage
V
(BR)CEO
I
C
= -10mA , I
B
=0
V
Emitter-Base breakdown voltage
V
(BR)EBO
I
E
= -1μA , I
C
=0
V
Collector cut-off current
Emitter cut-off current
BC856A ,857A ,858A
BC856B ,857B ,858B
BC857C ,858C
I
CBO
I
EBO
V
CB
= -30V , I
E
=0
V
EB
= -5V , I
C
=0
125
220
420
-1
-15
-0.1
250
475
800
-0.65
-0.3
nA
µA
DC current gain
h
FE
V
CE
= -5V , I
C
= -2.2mA
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=-100mA , I
B
=-5mA
I
C
=-10mA , I
B
=-0.5mA
I
C
=-10mA , I
B
=-0.5mA
I
C
=-100mA , I
B
=-5mA
I
C
=-2mA , V
CE
=-5V
I
C
=-10mA , V
CE
=-5V
V
CB
=-10V , I
E
=I
e
=0
f=1MH
Z
I
C
=-200uA,V
CE
=-5V
R
S
=2k
Ω
,f=1kHz,
B=200Hz
V
CE
=-5V, I
C
=-10mA
f=100MH
Z
100
4.5
-0.6
-0.7
-0.85
-0.65
V
Base-Emitter saturation voltage
V
BE(sat)
V
-0.75
-0.82
Base-Emitter voltage
V
BE(on)
V
Collector capacitance
C
C
pF
Transition frequency
F
2
10
dB
Transition frequency
f
T
MH
Z
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QW-JTR16
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Comchip Technology CO., LTD.
General Purpose Transistor
Electrical Characteristic Curves (BC856-HF Thru. BC858-HF Series)
Fig.1 - DC current gain as A function fo
collector current; typical values.
500
BC857A;V
CE
= -5V
Fig.2 - Base-Emitter voltage as a function
of collector current; typical values
-1200
-1000
400
-800
°C
V
BE
, (mV)
300
Tamb=150°C
Tamb
=-55
h
FE
-600
b
Tam
°C
=25
200
Tamb=25°C
-400
b=1
Tam
C
50 °
100
Tamb=-55°C
-200
BC857A;V
CE
= -5V
0
-2
-10
0
-10
-1
-1
-10
-10
2
-10
3
-10
-2
-10
-1
-1
-10
-10
2
-10
3
I
C
, (mA)
I
C
, (mA)
Fig.3 - Collector-Emitter saturation voltage
as a function of collector current;
typical values.
-10
4
BC857A;I
C
/I
B
= 20
Fig.4 - Base-Emitter saturation voltage
as a function of collector current;
typical values
-1200
-1000
3
V
BEsat
, (mV)
-10
V
CEsat, (mV)
-800
-600
-400
Tamb
=-55
°C
C
Tamb
= 25 °
2
Tamb=150°C
-10
Tamb
= 15 0
°C
Tamb=25°C
Tamb=-55°C
-200
BC857A;I
C
/I
B
= 20
2
-10
-1
-10
-1
-10
I
C,
(mA)
-10
-10
3
0
-1
-10
-1
-10
-10
2
-10
3
I
C
, (mA)
Fig.5 - DC current gain as a function fo
collector current; typical values.
1000
BC857B;V
CE
= -5V
Fig. 6 - Base-Emitter voltage as a function
of collector current; typical values.
-1200
-1000
800
-800
°C
V
BE
, (mV)
600
Tamb=150°C
Tamb
= -5 5
h
FE
-600
-400
b =2
Tam
5°C
400
Tamb=25°C
200
Tamb=-55°C
b
Tam
0
=15
°C
-200
BC857B;V
CE
=-5V
0
-10
-2
0
-10
-1
-1
-10
-10
2
-10
3
-10
-2
-10
-1
-1
-10
-10
2
-10
3
I
C
, (mA)
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR16
I
C
, (mA)
REV:A
Page 3
Comchip Technology CO., LTD.
General Purpose Transistor
Electrical Characteristic Curves (BC856-HF Thru. BC858-HF Series)
Fig.7 - Collector-Emitter saturation voltage
as a function of collector current
typical values.
-10
4
BC857B;I
C
/I
B
= 20
Fig.8 - Base-Emitter saturation voltage
as a function of collector current;
typical values
-1200
-1000
3
V
CEsat
, (mV)
V
BEsat
, (mV)
-10
-800
-600
-400
Tamb
=-55
°C
C
Tamb
= 25 °
2
Tamb=150°C
-10
Tamb
= 15 0
°C
-200
Tamb=-55°C
Tamb=25°C
BC857B;I
C
/I
B
= 20
-10
0
-1
-10
-1
-10
-10
2
-10
3
-10
-1
-1
-10
-10
2
-10
3
I
C
, (mA)
Fig.9 - DC current gain as a function fo
collector current; typical values.
1000
BC857C;V
CE
= -5V
I
C
, (mA)
Fig.10 - Base-Emitter voltage as a function
of collector current; typical values
-1200
-1000
800
Tam
b
= 15 0
°C
-800
Tamb
=-55
°C
V
BE
, (mV)
600
b=2
Tam
5°C
h
FE
-600
-400
b =1
Tam
C
50°
400
Tamb=25°C
Tamb=-55°C
200
-200
BC857C;V
CE
= -5V
0
-2
-10
0
-10
-1
-1
-10
-10
2
-10
3
-10
-1
-1
-10
-10
2
-10
3
I
C
, (mA)
I
C
, (mA)
Fig.11 - Collector-Emitter saturation voltage
as a function of collector current;
typical values.
-10
4
BC857C;I
C
/I
B
= 20
Fig.12 - Base-Emitter saturation voltage
as a function of collector current;
typical values
-1200
-1000
3
V
BEsat
, (mV)
V
CEsat
, (mV)
-10
-800
-600
Tamb
=-55
°C
C
Tamb
= 25 °
2
Tamb=150°C
-10
-400
-200
Tamb
=150
°C
Tamb=-55°C
Tamb=25°C
BC857C;I
C
/I
B
= 20
-10
-1
-10
0
-1
-10
-10
2
-10
3
-10
-1
-1
-10
-10
2
-10
3
I
C
, (mA)
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR16
I
C
, (mA)
REV:A
Page 4
Comchip Technology CO., LTD.
General Purpose Transistor
Reel Taping Specification
d
F
E
P0
P1
W
XX
B
12
0
o
D
2
D
1
D
W
1
SYMBOL
A
3.15
±
0.10
0.124
±
0.004
B
2.77
±
0.10
0.109
±
0.004
C
1.22
±
0.10
0.048
±
0.004
d
1.50 ± 0.10
0.059 ± 0.004
D
178.00
±
1.00
7.008
±
0.039
D
1
54.40
±
0.50
2.142
±
0.020
D
2
13.00
±
0.50
0.512
±
0.020
SOT-23
(mm)
(inch)
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.05
0.138
±
0.002
P
4.00
±
0.10
0.157
±
0.004
P
0
4.00
±
0.10
0.157
±
0.004
P
1
2.00
±
0.05
W
8.00
+
0.30 /
-
0.10
W
1
12.50
±
1.00
0.492
±
0.039
SOT-23
(mm)
(inch)
0.079
±
0.002
0.315
+
0.012 /
-
0.004
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR16
REV:A
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Comchip Technology CO., LTD.
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