NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
•
HIGH INSERTION GAIN:
18.5 dB at 500 MHz
•
LOW NOISE FIGURE:
1.5 dB at 500 MHz
E
NE021
SERIES
•
HIGH POWER GAIN:
12 dB at 2 GHz
B
•
LARGE DYNAMIC RANGE:
19 dBm at 1 dB,
2 GHz Gain Compression
DESCRIPTION
NEC's NE021 series of NPN silicon transistors provides eco-
nomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
intermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC
gold, platinum, titanium, and platinum-silicide metallization
system to provide the utmost in reliability. NE02107 is avail-
able in both common-base and common-emitter configura-
tions and has been qualified for high-reliability space applica-
tions.
00 (CHIP)
um
E:
OT part n re
E N ing
t a
S
E A low
he e
PL
tas
ol
da :
e f
Th
his ive
m t mot
fro
NE02135
ro
p
PARAMETERS
1 0 0
TYPICAL NOISE
on
n
E0 2 3 3
N
ers
mb
021 9
N E 2 13
t nu re
0
par t a
N E w i ng
hee
llo
NE02139
tas
o
f
a
TYPICAL NOISE PARAMETERS
h e th i s d
T
d:
om
nue 7
fr
nti
0
fo r
sco E021
ice
di
N
35 es off
021 sal
NE all
e c
as
Ple ls.
tai
de
33 (SOT 23 STYLE)
35 (MICRO-X)
(T
A
= 25°C)
Rn/50
FREQ.
(MHz)
NF
OPT
(dB)
G
A
Γ
OPT
(dB)
MAG
ANG
V
CE
= 10 V, I
C
= 5 mA
500
1.2
1000
1500
2000
2500
3000
3500
500
1.5
2.0
2.4
2.6
3.6
3.7
18.60
.36
69
.14
39 (SOT 143 STYLE)
13.82
11.83
9.36
7.82
7.51
6.31
.31
.50
124
165
.12
.05
.44
.52
.68
.71
-175
-161
-141
-139
149
.06
.10
.14
.21
FREQ.
(MHz)
NF
OPT
(dB)
G
A
Γ
OPT
V
CE
= 10 V, I
C
= 20 mA
1.8
1000
1500
2000
2500
3000
3500
1.9
2.4
2.9
3.2
3.9
4.3
(dB)
MAG
ANG
Rn/50
21.32
.16
.15
V
CE
= 10 V, I
C
= 20 mA
500
1.8
1000
1500
2000
2.1
16.15
13.50
11.02
9.12
8.10
6.48
.33
.46
.53
169
.13
17.5
9.5
7.5
0.11
156
.20
-179
-167
.09
.08
12.5
0.27
168
.16
2.3
2.6
0.36
0.43
-156
-147
.18
.21
.57
.62
.67
-154
-139
-134
.14
.27
.42
ers
b
07/07B
(T
A
= 25°C)
California Eastern Laboratories
NE021 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
|S
21
|
2
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
dB
dB
dB
µA
µA
20
pF
°C/W
°C/W
mW
580
700
350
70
0.6
MIN
NE02100
00 (CHIP)
TYP
4.5
18.5
13
6.5
1.5
2.7
MAX
MIN
NE02107
07/07B
3
TYP
4.5
18.5
13
6.5
1.5
2.7
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at V
CE
= 10 V, I
C
= 20 mA
Insertion Power Gain at V
CE
= 10 V, I
C
= 20 mA,
f = 0.5 GHz
f = 1 GHz
f = 2 GHz
Minimum Noise Figure
2
at
V
CE
= 10 V, I
C
= 3 mA, f = 0.5 GHz
V
CE
= 10 V, I
C
= 5 mA, f = 2 GHz
Collector Cutoff Current at V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 2 V, I
C
= 0
Forward Current Gain at V
CE
= 10 V, I
C
= 20 mA
Collector to Base Capacitance
4
at V
CB
= 10 V, I
E
= 0, f = 1 MHz
Thermal Resistance (Junction to Case)
Thermal Resistance (Junction to Ambient)
Total Power Dissipation
5.5
5.5
NF
MIN
4.5
1.0
1.0
250
1.0
70
20
4.5
1.0
1.0
I
CBO
I
EBO
h
FE
C
CB
R
TH (J-C)
R
TH (J-A)
P
T5
70
0.6
250
1.0
90
500
700
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
|S
21E
|
2
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
NE02133
2SC2351
33
MIN
NE02135
2SC2149
35
NE02139
2SC4092
39
TYP MAX
4.5
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at V
CE
= 10 V,
I
C
= 20 mA
Insertion Power Gain at
V
CE
= 10 V, I
C
= 20 mA,
f = 0.5 GHz
f = 1 GHz
f = 2 GHz
Minimum Noise Figure
6
at
V
CE
= 10 V, I
C
= 3 mA,
f = 0.5 GHz
V
CE
= 10 V, I
C
= 5 mA,
f = 1 GHz
f = 2 GHz
Collector Cutoff Current at V
CB
= 15 V,
I
E
= 0
Emitter Cutoff Current at V
EB
= 2 V,
I
C
= 0
Forward Current Gain at
V
CE
= 10 V, I
C
= 20 mA
Collector to Base Capacitance
4
at
V
CB
= 10 V, I
E
= 0 , f = 1 MHz
Thermal Resistance (Junction to Case)
Thermal Resistance (Junction to Ambient)
Total Power Dissipation
TYP MAX MIN
4.5
TYP MAX MIN
4.5
dB
dB
dB
9
4
15
10
5
5
18.5
13
5.7
9
10
NF
MIN
dB
dB
dB
µA
µA
40
pF
°C/W
°C/W
mW
666
150
290
70
0.75
1.5
3
1.5
1.5
2.7
1.0
1.0
200
1.0
20
70
0.6
4.0
1.0
1.0
250
1.0
120
600
500
500
200
40
70
.75
1.0
1.0
200
I
CBO
I
EBO
h
FE
C
CB
R
TH (J-C)
R
TH (J-A)
P
T5
Notes:
1. Electronic Industrial Association of Japan.
2. Input and output are tuned for optimum noise figures.
3. Common base electrical charactristics see S-Parameters.
4. C
CB
measurement employs a three-terminal capacitance bridge
5. Minimum dissipations based on R
TH (J-A)
for applications without effective
incorporating a guard circuit. The emitter terminal shall be
heat sink, maximum dissipations based on R
TH (J-C)
for applications with
connected to the guard terminal.
effective heat sink.
6. Output and Input are tuned for minimum noise figure.
NE021 SERIES
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
°C
°C
RATINGS
25
12
2
3
200
3
-65 to +200
4
800
NE02100, NE02107
DC POWER DERATING CURVES
Total Power Dissipation, P
T
(mW)
70
NE02100
R
TH(J-C)
= 70˚C/W
NE02107
R
TH(J-C)
= 90˚C/W
600
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Typical BV
CER
= 25 V for R
≤
300
Ω.
3. Maximum T
J
for the NE02133 and NE02139
is +150°C.
4. Maximum storage temperature for the NE02135 is -65 to
+150°C. Maximum storage temperature for the
NE02133 and NE02139 is -55 to 150°C.
400
R
TH (J-A)
=
500˚C/W
NE02107
200
0
0
50
100
150
200
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
NE02133
DC POWER DERATING CURVES
400
800
Ambient Temperature, T
A
(°C)
NE02135
DC POWER DERATING CURVES
Collector Dissipation, P
C
(mW)
300
1
2
200
3
4
100
1. Mounted On Al
2
O
3
Substrate
(32x21x10mm) And Encapsulated
In Epoxy Resin (R
TH
(
J-A
) = 267˚C/W
2. Mounted On Al
2
O
3
Substrate
(18x29x0.8mm) R
TH
(
J-A
) = 370˚C/W
3. Mounted On Al
2
O
3
Substrate
(10x15x0.8mm) R
TH
(
J-A
) = 490˚C/W
4. Free Air, R
TH
(
J-A
) = 666˚C/W
Total Power Dissipation, P
T
(mW)
600
WITH INFINITE
HEAT SINK
R
TH(J-C)
= 120˚ C/W
MOUNTED ON AI
2
O
3
SUBSTRATE
(20X50X0.6") R
TH(J-A)
=
190˚C/W
400
200
FREE AIR
R
TH(J-A)
= 600˚C/W
0
0
0
50
100
150
200
0
50
100
150
200
Ambient Temperature, T
A
(°C)
Ambient Temperature, T
A
(°C)
VOLTAGE CURRENT
CHARACTERISTICS
DEVICE CAPACITANCE
Collector to Base Capacitance, C
CB
(pF)
Emitter to Base Capacitance, C
EB
(pF)
70
50
V
CE
= 10 V
2
f =1 MHz
I
E
= 0
Collector Current, I
C
(mA)
30
20
10
7
5
3
2
1
0.7
C
CB
1
C
EB
0.7
0.5
0.3
0
0.5
1
2
3
5
7 10
20 30
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage, V
BE
(V)
Collector to Base Voltage, V
CB
(V)
Emitter to Base Voltage, V
EB
(V)
NE021 SERIES
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
NE02107, NE02135
GAIN vs. FREQUENCY
40
V
CE
= 10 V
I
C
= 20 mA
32
NE02133
GAIN vs. FREQUENCY
40
V
CE
= 10 V
I
C
= 20mA
32
Gain (dB)
Gain (dB)
24
24
2
|S21|
2
16
MAG
16
|S
21
|
MAG
8
8
0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
Frequency, f (GHz)
Frequency, f (GHz)
NE02107
INSERTION GAIN vs.
COLLECTOR CURRENT
30
100 MHz
5
NOISE FIGURE vs.
COLLECTOR CURRENT
V
CE
= 10 V
2 GHz
Insertion Gain, |S
21
|
2
(dB)
25
20
500 MHz
15
1 GHz
10
2 GHz
5
0
0
10
20
30
40
50
60
70
Noise Figure, NF (dB)
V
CE
= 10 V
4
3
2
0.5 GHz
NE02133
NE02107, NE02135
1
0
1
2
3
5
7
10
20
30
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
GAIN BANDWIDTH PRODUCT
AND FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
20
500
5.0
NOISE FIGURE AND ASSOCIATED
GAIN vs. FREQUENCY
5
V
CE
= 10 V
I
C
= 5 mA
Associated Gain, G
A
(dB)
4
G
A
16
f
T
300
V
CE
= 10 V
200
2.0
3.0
3
NF
2
12
8
100
1.0
1
NE02133
NE02100, NE02107, NE02135
4
70
50
1
2
3
5 7
10
h
FE
0.7
0.5
20
30
50 70 100
0
0.1
0.2
0.3
0.5
0.7
1
2
3
0
Frequency, f (GHz)
Collector Current, I
C
(mA)
Gain Bandwidth Product, f
T
(GHz)
DC Forward Current Gain, h
FE
Noise Figure, NF (dB)
NE021 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
1
(T
A
= 25°C)
j50
j25
j100
90˚
S
21
0.1 GHz
150˚
120˚
60˚
j10
S
11
5 GHz
S
21
5 GHz
25
50
S
22
5 GHz
100
S
22
0.1 GHz
0
S
12
5 GHz
S
12
0.1 GHz
30˚
0
10
180˚ 0.5 0.4 0.3 0.2 0.1
0˚
-j10
10
S
11
0.1 GHz
-j25
-j50
-j100
Coordinates in Ohms
Frequency in GHz
(V
CE
= 10 V, I
C
= 20 mA)
-150˚
15
20
-120˚
-30˚
S
21 25
-90˚
-60˚
NE02100
V
CE
= 10 V, I
C
= 5 mA
FREQUENCY
(MHz)
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
MAG
.84
.75
.73
.71
.71
.71
.70
.70
.70
.70
.70
.75
.72
.72
.71
.71
.71
.71
.71
.70
.70
.70
.68
.72
.72
.72
.72
.72
.71
.71
.71
.71
.71
S
11
ANG
-32
-114
-150
-164
-173
-179
176
172
168
165
161
-47
-137
-162
-173
-179
176
172
168
165
162
159
-70
-152
-170
-178
177
172
169
166
162
160
157
MAG
11.83
7.22
4.13
2.85
2.16
1.75
1.49
1.28
1.13
1.02
.92
20.04
9.40
4.97
3.37
2.56
2.05
1.74
1.50
1.33
1.19
1.08
29.75
10.58
5.42
3.65
2.74
2.21
1.86
1.61
1.42
1.28
1.15
S
21
ANG
160
113
89
76
66
57
49
42
34
27
20
153
105
86
75
66
58
51
44
37
30
24
145
99
84
74
66
58
51
44
38
31
25
MAG
.03
.07
.09
.09
.10
.10
.11
.12
.12
.13
.14
.02
.05
.06
.07
.08
.09
.10
.11
.12
.13
.14
.02
.04
.05
.06
.07
.09
.10
.11
.12
.13
.14
S
12
ANG
70
36
27
27
28
30
32
33
34
34
35
65
34
34
38
41
43
44
44
44
44
43
59
37
43
48
50
51
52
51
51
49
48
.94
.56
.39
.36
.33
.33
.34
.35
.37
.39
.41
.89
.41
.27
.23
.22
.23
.24
.25
.27
.29
.31
.81
.30
.19
.17
.17
.17
.19
.20
.22
.24
.27
S
22
MAG
ANG
-16
-45
-51
-56
-61
-67
-73
-80
-88
-94
-100
-24
-57
-62
-66
-71
-76
-82
-88
-95
-100
-106
-33
-65
-69
-73
-78
-83
-87
-93
-99
-105
-109
.11
.29
.54
.77
.97
1.14
1.25
1.35
1.41
1.47
1.49
.11
.39
.69
.92
1.09
1.19
1.27
1.31
1.36
1.39
1.39
.14
.53
.87
1.05
1.17
1.23
1.27
1.30
1.34
1.33
1.34
K
MAG
2
(dB)
26.4
19.9
16.9
15.0
13.5
10.1
8.3
6.9
5.9
4.9
4.2
29.2
22.5
19.0
16.8
13.2
10.9
9.2
7.9
6.8
5.9
5.1
31.6
24.3
20.4
16.4
13.2
11.3
9.7
8.4
7.3
6.4
5.6
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 20 mA
Notes:
1. S-Parameters include bond wires.
BASE:Total 1 wire (s), 1 per bond pad, 0.0115 (291
µm)
long each wire. EMITTER: Total 2 wire (s), 1 per side, 0.015" (393
µm)
long each wire.
COLLECTOR: Total 1 wire (s), 1 per bond pad, 0.0072" (182
µm)
WIRE: 0.0007' (17.7
µm)
dia., gold.
long each wire.
2. Gain Calculations:
MAG =
|S
21
|
|S
12
|
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
Microcontroller MCU
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