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NE02107

Description
RF SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size170KB,12 Pages
ManufacturerETC
Download Datasheet Parametric Compare View All

NE02107 Overview

RF SMALL SIGNAL TRANSISTOR

NE02107 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeRF SMALL SIGNAL
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
HIGH INSERTION GAIN:
18.5 dB at 500 MHz
LOW NOISE FIGURE:
1.5 dB at 500 MHz
E
NE021
SERIES
HIGH POWER GAIN:
12 dB at 2 GHz
B
LARGE DYNAMIC RANGE:
19 dBm at 1 dB,
2 GHz Gain Compression
DESCRIPTION
NEC's NE021 series of NPN silicon transistors provides eco-
nomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
intermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC
gold, platinum, titanium, and platinum-silicide metallization
system to provide the utmost in reliability. NE02107 is avail-
able in both common-base and common-emitter configura-
tions and has been qualified for high-reliability space applica-
tions.
00 (CHIP)
um
E:
OT part n re
E N ing
t a
S
E A low
he e
PL
tas
ol
da :
e f
Th
his ive
m t mot
fro
NE02135
ro
p
PARAMETERS
1 0 0
TYPICAL NOISE
on
n
E0 2 3 3
N
ers
mb
021 9
N E 2 13
t nu re
0
par t a
N E w i ng
hee
llo
NE02139
tas
o
f
a
TYPICAL NOISE PARAMETERS
h e th i s d
T
d:
om
nue 7
fr
nti
0
fo r
sco E021
ice
di
N
35 es off
021 sal
NE all
e c
as
Ple ls.
tai
de
33 (SOT 23 STYLE)
35 (MICRO-X)
(T
A
= 25°C)
Rn/50
FREQ.
(MHz)
NF
OPT
(dB)
G
A
Γ
OPT
(dB)
MAG
ANG
V
CE
= 10 V, I
C
= 5 mA
500
1.2
1000
1500
2000
2500
3000
3500
500
1.5
2.0
2.4
2.6
3.6
3.7
18.60
.36
69
.14
39 (SOT 143 STYLE)
13.82
11.83
9.36
7.82
7.51
6.31
.31
.50
124
165
.12
.05
.44
.52
.68
.71
-175
-161
-141
-139
149
.06
.10
.14
.21
FREQ.
(MHz)
NF
OPT
(dB)
G
A
Γ
OPT
V
CE
= 10 V, I
C
= 20 mA
1.8
1000
1500
2000
2500
3000
3500
1.9
2.4
2.9
3.2
3.9
4.3
(dB)
MAG
ANG
Rn/50
21.32
.16
.15
V
CE
= 10 V, I
C
= 20 mA
500
1.8
1000
1500
2000
2.1
16.15
13.50
11.02
9.12
8.10
6.48
.33
.46
.53
169
.13
17.5
9.5
7.5
0.11
156
.20
-179
-167
.09
.08
12.5
0.27
168
.16
2.3
2.6
0.36
0.43
-156
-147
.18
.21
.57
.62
.67
-154
-139
-134
.14
.27
.42
ers
b
07/07B
(T
A
= 25°C)
California Eastern Laboratories

NE02107 Related Products

NE02107 NE02135 NE02133-T1B NE02107B NE02139-T1 NE02100 NE021
Description RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
Transistor type RF SMALL SIGNAL RF SMALL SIGNAL RF SMALL SIGNAL RF SMALL SIGNAL RF SMALL SIGNAL RF SMALL SIGNAL RF SMALL SIGNAL
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