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UNR5113

Description
Composite Device - Transistors with built-in Resistor
CategoryDiscrete semiconductor    The transistor   
File Size358KB,17 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

UNR5113 Overview

Composite Device - Transistors with built-in Resistor

UNR5113 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Transistors with built-in Resistor
UNR511x Series
(UN511x Series)
Silicon PNP epitaxial planar type
Unit: mm
(0.425)
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
S-Mini type package, allowing automatic insertion through the tape/
magazine packing
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
1.25
±0.10
2.1
±0.1
1
2
0.2
±0.1
0.9
±0.1
0.9
+0.2
–0.1
(0.65) (0.65)
1.3
±0.1
Resistance by Part Number
Marking symbol
UNR5110 (UN5110)
6L
UNR5111 (UN5111)
6A
UNR5112 (UN5112)
6B
UNR5113 (UN5113)
6C
UNR5114 (UN5114)
6D
UNR5115 (UN5115)
6E
UNR5116 (UN5116)
6F
UNR5117 (UN5117)
6H
UNR5118 (UN5118)
6I
UNR5119 (UN5119)
6K
UNR511D (UN511D)
6M
UNR511E (UN511E)
6N
UNR511F (UN511F)
6O
UNR511H (UN511H)
6P
UNR511L (UN511L)
6Q
UNR511M (UN511M)
EI
UNR511N (UN511N)
EW
UNR511T (UN511T)
EY
UNR511V (UN511V)
FC
UNR511Z (UN511Z)
FE
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
10˚
2.0
±0.2
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Internal Connection
R
1
B
R
2
E
0 to 0.1
C
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
150
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00022BED
1
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