MRF1090MB datasheet, PDF - EEWORLD Datasheet

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MRF1090MB: DescriptionMICROWAVE POWER TRANSISTOR NPN SILICON; CategoryDiscrete semiconductor The transistor; File Size83KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MRF1090MB Overview

MICROWAVE POWER TRANSISTOR NPN SILICON

MRF1090MB Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	DISK BUTTON, O-CRDB-F4
Reach Compliance Code	unknow
Shell connection	BASE
Maximum collector current (IC)	6 A
Collector-based maximum capacity	16 pF
Configuration	SINGLE
Minimum DC current gain (hFE)	10
highest frequency band	L BAND
JESD-30 code	O-CRDB-F4
Number of components	1
Number of terminals	4
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Polarity/channel type	NPN
Minimum power gain (Gp)	8.4 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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MOTOROLA

The RF Line

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF1090MA/D

Microwave Pulse

Power Transistors

Designed for Class B and C common base amplifier applications in short

pulse TACAN, IFF, and DME transmitters.

•

Guaranteed Performance @ 1090 MHz, 50 Vdc

Output Power = 90 Watts Peak

Minimum Gain = 8.4 dB

•

100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

•

Industry Standard Package

•

Nitride Passivated

•

Gold Metallized for Long Life and Resistance to Metal Migration

•

Internal Input Matching for Broadband Operation

•

Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MRF1090MA

MRF1090MB

90 W PEAK, 960 – 1215 MHz

MICROWAVE POWER

TRANSISTORS

NPN SILICON

MAXIMUM RATINGS

Rating

Collector–Base Voltage

Emitter–Base Voltage

Collector–Current — Peak (1)

Total Device Dissipation @ TC = 25°C (1) (2)

Derate above 25°C

Storage Temperature Range

Symbol

VCBO

VEBO

Tstg

Value

4.0

6.0

290

1.66

– 65 to +150

Unit

Vdc

Adc

Watts

W/°C

°C

CASE 332–04, STYLE 1

(MRF1090MA)

CASE 332A–03, STYLE 1

(MRF1090MB)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case (3)

Symbol

θJC

Max

0.6

Unit

°C/W

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 25 mAdc, VBE = 0)

Collector–Base Breakdown Voltage

(IC = 25 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 5.0 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 50 Vdc, IE = 0)

V(BR)CES

V(BR)CBO

V(BR)EBO

ICBO

4.0

—

5.0

Vdc

mAdc

ON CHARACTERISTICS

DC Current Gain (4)

(IC = 2.5 Adc, VCE = 5.0 Vdc)

hFE

—

NOTES:

(continued)

1. Pulse Width = 10

µs,

Duty Cycle = 1%.

2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.

3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

4. 80

µs

Pulse on Tektronix 576 or equivalent.

REV 8

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997

MRF1090MA MRF1090MB

MRF1090MB Related Products

	MRF1090MB	MRF1090Mx	MRF1090MA
Description	MICROWAVE POWER TRANSISTOR NPN SILICON	MICROWAVE POWER TRANSISTOR NPN SILICON	MICROWAVE POWER TRANSISTOR NPN SILICON
Maker	Motorola ( NXP )	-	Motorola ( NXP )
package instruction	DISK BUTTON, O-CRDB-F4	-	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknow	-	unknow
Maximum collector current (IC)	6 A	-	6 A
Collector-based maximum capacity	16 pF	-	16 pF
Configuration	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	10	-	10
highest frequency band	L BAND	-	L BAND
JESD-30 code	O-CRDB-F4	-	O-CRPM-F4
Number of components	1	-	1
Number of terminals	4	-	4
Package body material	CERAMIC, METAL-SEALED COFIRED	-	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	-	ROUND
Package form	DISK BUTTON	-	POST/STUD MOUNT
Polarity/channel type	NPN	-	NPN
Minimum power gain (Gp)	8.4 dB	-	8.4 dB
Certification status	Not Qualified	-	Not Qualified
surface mount	YES	-	NO
Terminal form	FLAT	-	FLAT
Terminal location	RADIAL	-	RADIAL
transistor applications	AMPLIFIER	-	AMPLIFIER
Transistor component materials	SILICON	-	SILICON

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