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MRF1090Mx

Description
MICROWAVE POWER TRANSISTOR NPN SILICON
File Size83KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MRF1090Mx Overview

MICROWAVE POWER TRANSISTOR NPN SILICON

MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1090MA/D
Microwave Pulse
Power Transistors
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 90 Watts Peak
Minimum Gain = 8.4 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized for Long Life and Resistance to Metal Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF1090MA
MRF1090MB
90 W PEAK, 960 – 1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Peak (1)
Total Device Dissipation @ TC = 25°C (1) (2)
Derate above 25°C
Storage Temperature Range
Symbol
VCBO
VEBO
IC
PD
Tstg
Value
70
4.0
6.0
290
1.66
– 65 to +150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
CASE 332–04, STYLE 1
(MRF1090MA)
CASE 332A–03, STYLE 1
(MRF1090MB)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R
θJC
Max
0.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
70
70
4.0
5.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(IC = 2.5 Adc, VCE = 5.0 Vdc)
hFE
10
30
NOTES:
(continued)
1. Pulse Width = 10
µs,
Duty Cycle = 1%.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80
µs
Pulse on Tektronix 576 or equivalent.
REV 8
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF1090MA MRF1090MB
1

MRF1090Mx Related Products

MRF1090Mx MRF1090MB MRF1090MA
Description MICROWAVE POWER TRANSISTOR NPN SILICON MICROWAVE POWER TRANSISTOR NPN SILICON MICROWAVE POWER TRANSISTOR NPN SILICON
Maker - Motorola ( NXP ) Motorola ( NXP )
package instruction - DISK BUTTON, O-CRDB-F4 POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code - unknow unknow
Maximum collector current (IC) - 6 A 6 A
Collector-based maximum capacity - 16 pF 16 pF
Configuration - SINGLE SINGLE
Minimum DC current gain (hFE) - 10 10
highest frequency band - L BAND L BAND
JESD-30 code - O-CRDB-F4 O-CRPM-F4
Number of components - 1 1
Number of terminals - 4 4
Package body material - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape - ROUND ROUND
Package form - DISK BUTTON POST/STUD MOUNT
Polarity/channel type - NPN NPN
Minimum power gain (Gp) - 8.4 dB 8.4 dB
Certification status - Not Qualified Not Qualified
surface mount - YES NO
Terminal form - FLAT FLAT
Terminal location - RADIAL RADIAL
transistor applications - AMPLIFIER AMPLIFIER
Transistor component materials - SILICON SILICON
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