MR3508 datasheet, PDF - EEWORLD Datasheet

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MR3508: DescriptionRECTIFIER DIODE,100V V(RRM); Categorysemiconductor Discrete semiconductor; File Size39KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]

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MR3508 Overview

RECTIFIER DIODE,100V V(RRM)

MR3508 Parametric

Parameter Name	Attribute value
Number of components	1
state	Contact Mf
Diode type	RECTIFIER DIODE
structure	SINGLE
Maximum forward voltage	1.1 V
Maximum non-repetitive peak forward current	400 A
Maximum operating temperature	175 Cel
Maximum output current	35 A
Maximum repetitive peak reverse voltage	100 V
sub_category	Rectifier Diodes
surface mount	YES

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MR3500 - MR3510

PRV : 50 - 1000 Volts

Io : 35 Amperes

FEATURES :

*

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

AUTOMOTIVE

RECTIFIER DIODES

5

°

NOM

0.342 (8.69)

0.332 (8.43)

MECHANICAL DATA :

*

Case : Molded plastic

Epoxy : UL94V-O rate flame retardant

Terminals : Terminal are readily solderable

Polarity : Cathode polarity band

Mounting position : Any

Weight : 1.8 grams

0.246 (6.25)

0.234 (5.94)

0.175 (4.45)

0.165 (4.19)

0.222 (5.64)

0.218 (5.54)

Dimensions in inches and ( millimeter )

Rating at 25

°

C ambient temperature unless otherw ise specified.

Single phase, half w ave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Average Rectified Forward Current Tc = 150

°

C

Peak Forward Surge Current Single half sine

wave superimposed on rated load (JEDEC Method)

Maximum Forward Voltage at I

F

= 35 Amps.

Maximum DC Reverse Current

at rated DC Blocking Voltage

Thermal Resistance (Note 1)

Junction Temperature Range

Storage Temperature Range

Marking Code

Ta = 25

°

C

Ta = 100

°

C

SYMBOL

V

RRM

V

RMS

V

DC

I

F(AV)

MR

3500

50

35

50

MR

3501

100

70

100

MR

3502

200

140

200

MR

3504

400

280

400

35

MR

3506

600

420

600

MR

3508

800

560

800

MR

3510

1000

700

1000

UNIT

Volts

Amps.

I

FSM

V

F

I

R

I

R(H)

R

θ

JC

T

J

T

STG

400

1.1

5.0

1.0

- 65 to + 175

Amps.

Volts

µ

A

mA

°

C/W

°

C

°

C

Note

: (1) Thermal resistance from junction to case. Single side cooled.

UPDATE : OCTOBER 19, 2000

MR3508 Related Products

	MR3508	MR3510	MR3506	MR3504	MR3502	MR3501	MR3500
Description	RECTIFIER DIODE,100V V(RRM)	RECTIFIER DIODE,100V V(RRM)	RECTIFIER DIODE,100V V(RRM)	RECTIFIER DIODE,100V V(RRM)	RECTIFIER DIODE,100V V(RRM)	RECTIFIER DIODE,100V V(RRM)	Rectifier Diode, 1 Phase, 1 Element, 35A, 50V V(RRM), Silicon,
Number of components	1	1	1	1	1	1	1
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum non-repetitive peak forward current	400 A	400 A	400 A	400 A	400 A	400 A	400 A
Maximum operating temperature	175 Cel	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	35 A	35 A	35 A	35 A	35 A	35 A	35 A
Maximum repetitive peak reverse voltage	100 V	1000 V	600 V	400 V	200 V	100 V	50 V
surface mount	YES	YES	YES	YES	YES	YES	YES
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	conform to	conform to
Maker	-	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	-
Reach Compliance Code	-	compli	compli	compli	compli	compli	compliant
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum forward voltage (VF)	-	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	-	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2
Phase	-	1	1	1	1	1	1
Number of terminals	-	2	2	2	2	2	2
Minimum operating temperature	-	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	-	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Maximum reverse current	-	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
Terminal form	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	-	END	END	END	END	END	END

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