MR3506 datasheet, PDF - EEWORLD Datasheet

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MR3506: DescriptionRECTIFIER DIODE,100V V(RRM); CategoryDiscrete semiconductor diode; File Size39KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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MR3506 Overview

RECTIFIER DIODE,100V V(RRM)

MR3506 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
package instruction	O-PEDB-N2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-PEDB-N2
Maximum non-repetitive peak forward current	400 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	35 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	DISK BUTTON
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	5 µA
surface mount	YES
Terminal form	NO LEAD
Terminal location	END

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MR3500 - MR3510

PRV : 50 - 1000 Volts

Io : 35 Amperes

FEATURES :

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

AUTOMOTIVE

RECTIFIER DIODES

NOM

0.342 (8.69)

0.332 (8.43)

MECHANICAL DATA :

Case : Molded plastic

Epoxy : UL94V-O rate flame retardant

Terminals : Terminal are readily solderable

Polarity : Cathode polarity band

Mounting position : Any

Weight : 1.8 grams

0.246 (6.25)

0.234 (5.94)

0.175 (4.45)

0.165 (4.19)

0.222 (5.64)

0.218 (5.54)

Dimensions in inches and ( millimeter )

Rating at 25

C ambient temperature unless otherw ise specified.

Single phase, half w ave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Average Rectified Forward Current Tc = 150

Peak Forward Surge Current Single half sine

wave superimposed on rated load (JEDEC Method)

Maximum Forward Voltage at I

= 35 Amps.

Maximum DC Reverse Current

at rated DC Blocking Voltage

Thermal Resistance (Note 1)

Junction Temperature Range

Storage Temperature Range

Marking Code

Ta = 25

Ta = 100

SYMBOL

RRM

RMS

F(AV)

3500

3501

100

3502

200

140

200

3504

400

280

400

3506

600

420

600

3508

800

560

800

3510

1000

700

1000

UNIT

Volts

Amps.

FSM

R(H)

STG

400

1.1

5.0

1.0

- 65 to + 175

Amps.

Volts

C/W

Note

: (1) Thermal resistance from junction to case. Single side cooled.

UPDATE : OCTOBER 19, 2000

MR3506 Related Products

	MR3506	MR3510	MR3508	MR3504	MR3502	MR3501	MR3500
Description	RECTIFIER DIODE,100V V(RRM)	RECTIFIER DIODE,100V V(RRM)	RECTIFIER DIODE,100V V(RRM)	RECTIFIER DIODE,100V V(RRM)	RECTIFIER DIODE,100V V(RRM)	RECTIFIER DIODE,100V V(RRM)	Rectifier Diode, 1 Phase, 1 Element, 35A, 50V V(RRM), Silicon,
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum non-repetitive peak forward current	400 A	400 A	400 A	400 A	400 A	400 A	400 A
Number of components	1	1	1	1	1	1	1
Maximum operating temperature	175 °C	175 °C	175 Cel	175 °C	175 °C	175 °C	175 °C
Maximum output current	35 A	35 A	35 A	35 A	35 A	35 A	35 A
Maximum repetitive peak reverse voltage	600 V	1000 V	100 V	400 V	200 V	100 V	50 V
surface mount	YES	YES	YES	YES	YES	YES	YES
Is it Rohs certified?	conform to	conform to	-	conform to	conform to	conform to	conform to
Maker	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	-	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	-
Reach Compliance Code	compli	compli	-	compli	compli	compli	compliant
ECCN code	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	GENERAL PURPOSE	GENERAL PURPOSE	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON
Maximum forward voltage (VF)	1.1 V	1.1 V	-	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	O-PEDB-N2	O-PEDB-N2	-	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2
Phase	1	1	-	1	1	1	1
Number of terminals	2	2	-	2	2	2	2
Minimum operating temperature	-65 °C	-65 °C	-	-65 °C	-65 °C	-65 °C	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	-	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	-	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Maximum reverse current	5 µA	5 µA	-	5 µA	5 µA	5 µA	5 µA
Terminal form	NO LEAD	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	-	END	END	END	END

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