TC4421/TC4422
9A High-Speed MOSFET Drivers
Features
• High Peak Output Current: 9A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2A Max
• Fast Rise and Fall Times:
- 30 ns with 4,700 pF Load
- 180 ns with 47,000 pF Load
• Short Propagation Delays: 30 ns (typ)
• Low Supply Current:
- With Logic ‘1’ Input – 200 µA (typ)
- With Logic ‘0’ Input – 55 µA (typ)
• Low Output Impedance: 1.4Ω (typ)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs Up To 5V
• Pin-Compatible with the TC4420/TC4429
6A MOSFET Driver
• Space-saving 8-Pin 6x5 DFN Package
General Description
The TC4421/TC4422 are high-current buffer/drivers
capable of driving large MOSFETs and IGBTs.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground termi-
nals. They can accept, without damage or logic upset,
more than 1A inductive current of either polarity being
forced back into their outputs. In addition, all terminals
are fully protected against up to 4 kV of electrostatic
discharge.
The TC4421/TC4422 inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
With both surface-mount and pin-through-hole
packages and four operating temperature range offer-
ings, the TC4421/22 family of 9A MOSFET drivers fit
into most any application where high gate/line
capacitance drive is required.
Applications
•
•
•
•
•
Line Drivers for Extra Heavily-Loaded Lines
Pulse Generators
Driving the Largest MOSFETs and IGBTs
Local Power ON/OFF Switch
Motor and Solenoid Driver
Package Types
(1)
8-Pin PDIP/ TC4421 TC4422
SOIC
V
DD
INPUT
NC
GND
1
8 V
DD
2
TC4421
7 OUTPUT
3
TC4422
6 OUTPUT
4
5 GND
V
DD
OUTPUT
OUTPUT
GND
V
DD
1
INPUT
2
NC
3
GND
4
8-Pin DFN
(2)
8
TC4421 TC4422
V
DD
V
DD
5-Pin TO-220
Tab is
Common
to V
DD
TC4421
TC4422
7
6
5
OUTPUT OUTPUT
OUTPUT OUTPUT
GND
GND
TC4421
TC4422
Note 1:
Duplicate pins must both be connected for proper operation.
2:
Exposed pad of the DFN package is electrically isolated.
2004 Microchip Technology Inc.
INPUT
GND
V
DD
GND
OUTPUT
DS21420D-page 1
TC4421/TC4422
Functional Block Diagram
V
DD
TC4421
Inverting
200 µA
300 mV
Output
Input
4.7V
TC4422
Non-Inverting
GND
Effective
Input
C = 25 pF
DS21420D-page 2
2004 Microchip Technology Inc.
TC4421/TC4422
1.0
ELECTRICAL
CHARACTERISTICS
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings†
Supply Voltage ..................................................... +20V
Input Voltage .................... (V
DD
+ 0.3V) to (GND – 5V)
Input Current (V
IN
> V
DD
)................................... 50 mA
Package Power Dissipation (T
A
≤
70°C)
5-Pin TO-220 .................................................... 1.6W
DFN ..............................................................
Note 2
PDIP ............................................................ 730 mW
SOIC............................................................ 750 mW
Package Power Dissipation (T
A
≤
25°C)
5-Pin TO-220 (With Heatsink) ........................ 12.5W
Thermal Impedances (To Case)
5-Pin TO-220 R
θJ-C
...................................... 10°C/W
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
2:
3:
I
S
V
DD
—
—
4.5
0.2
55
—
1.5
150
18
mA
µA
V
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
60
60
30
33
75
75
60
60
ns
ns
ns
ns
Figure 4-1,
C
L
= 10,000 pF
Figure 4-1,
C
L
= 10,000 pF
Figure 4-1
Figure 4-1
V
OH
V
OL
R
OH
R
OL
I
PK
I
DC
I
REV
V
DD
– 0.025
—
—
—
—
2
—
—
—
1.4
0.9
9.0
—
>1.5
—
0.025
—
1.7
—
—
—
V
V
Ω
Ω
A
A
A
DC TEST
DC TEST
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V
10V
≤
V
DD
≤
18V, T
A
= +25°C
(TC4421/TC4422 CAT only)
(Note 3)
Duty cycle
≤
2%, t
≤
300 µsec
V
IH
V
IL
I
IN
2.4
—
–10
1.8
1.3
—
—
0.8
+10
V
V
µA
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
Tested during characterization, not production tested.
2004 Microchip Technology Inc.
DS21420D-page 3
TC4421/TC4422
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise noted, over operating temperature range with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
I
S
V
DD
—
—
4.5
—
—
—
3
0.2
18
mA
V
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
60
60
50
65
120
120
80
80
ns
ns
ns
ns
Figure 4-1,
C
L
= 10,000 pF
Figure 4-1,
C
L
= 10,000 pF
Figure 4-1
Figure 4-1
V
OH
V
OL
R
OH
R
OL
V
DD
– 0.025
—
—
—
—
—
2.4
1.8
—
0.025
3.6
2.7
V
V
Ω
Ω
DC TEST
DC TEST
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
IH
V
IL
I
IN
2.4
—
–10
—
—
—
—
0.8
+10
V
V
µA
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
≤
V
DD
≤
18V.
Parameters
Temperature Ranges
Specified Temperature Range (C)
Specified Temperature Range (E)
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
Thermal Resistance, 8L-6x5 DFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
71
33.2
125
120
—
—
—
—
°C/W
°C/W
°C/W
°C/W
Typical 4-layer board with
vias to ground plane
T
A
T
A
T
A
T
J
T
A
0
–40
–40
—
–65
—
—
—
—
—
+70
+85
+125
+150
+150
°C
°C
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
DS21420D-page 4
2004 Microchip Technology Inc.
TC4421/TC4422
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
≤
V
DD
≤
18V.
220
200
180
160
22,000 pF
t
FALL
(nsec)
180
160
140
22,000 pF
120
100
80
60
4700 pF
40
20
1000 pF
10,000 pF
t
RISE
(nsec)
140
120
100
80
60
40
20
0
4
10,000 pF
4700 pF
1000 pF
6
8
10
12
V
DD
(V)
14
16
18
0
4
6
8
10
12
V
DD
(V)
14
16
18
FIGURE 2-1:
Voltage.
300
Rise Time vs. Supply
FIGURE 2-4:
Voltage.
300
Fall Time vs. Supply
5V
250
10V
200
150
15V
100
50
0
100
250
10V
200
150
5V
t
FALL
(nsec)
t
RISE
(nsec)
15V
100
50
0
100
1000
10,000
C
LOAD
(pF)
100,000
1000
10,000
C
LOAD
(pF)
100,000
FIGURE 2-2:
Load.
90
80
70
60
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
50
Fall Time vs. Capacitive
C
LOAD
= 10,000 pF
V
DD
= 15V
C
LOAD
= 1000 pF
45
Time (nsec)
Time (nsec)
40
t
RISE
50
40
30
35
t
D1
t
D2
t
FALL
30
-40
0
40
T
A
(
°
C)
80
120
25
4
6
8
10
12
14
16
18
V
DD
(V)
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
FIGURE 2-6:
Supply Voltage.
Propagation Delay vs.
2004 Microchip Technology Inc.
DS21420D-page 5
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