CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
250
-
2.0
1.0
-
-
-
-
-
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-
-
-
-
V
GS
= 0V to 12V
V
DD
= 125V,
I
D
= 9A
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 2V
I
D
= 9A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.185
-
-
-
-
-
26
10
8
40
3
7
1300
200
8
-
MAX
-
5.5
4.5
-
25
250
100
200
2.07
0.225
0.432
20
25
30
15
28
12
10
-
-
-
-
-
-
3.0
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
I
GSS
V
DS(ON)
r
DS(ON)12
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(12)
Q
gs
Q
gd
Q
g(20)
Q
g(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DS
= 200V,
V
GS
= 0V
V
GS
=
±30V
V
GS
= 12V, I
D
= 9A
I
D
= 6A,
V
GS
= 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
V
DD
= 125V, I
D
= 9A,
R
L
=13.9Ω, V
GS
= 12V,
R
GS
= 7.5Ω
2
FSGYE234R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
V
SD
t
rr
Q
RR
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±30V,
V
DS
= 0V
V
GS
= 0, V
DS
= 200V
V
GS
= 12V, I
D
= 9A
V
GS
= 12V, I
D
= 6A
MIN
250
2.0
-
-
-
-
MAX
-
4.5
100
25
2.07
0.225
UNITS
V
V
nA
µA
V
Ω
I
SD
= 9A
I
SD
= 9A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
1.9
MAX
1.2
310
-
UNITS
V
ns
µC
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT
(NOTE 5)
APPLIED
V
GS
BIAS
(V)
-20
-10
-5
-10
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
250
250
200
150
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
ION
SPECIES
Br
I
Au
Au
TYPICAL LET
(MeV/mg/cm)
37
60
82
82
TYPICAL
RANGE (µ)
36
32
28
28
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(Typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm
2
, RANGE = 36µ
LET = 60MeV/mg/cm
2
, RANGE = 32µ
LET = 82MeV/mg/cm
2
, RANGE = 28µ
300
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
250
200
V
DS
(V)
V
DS
(V)
150
100
50
TEMP = 25
o
C
0
0
-4
-8
-12
V
GS
(V)
-16
-20
-24
240
200
160
120
80
40
0
0
-5
-10
-15
-20
-25
V
GS
(V)
-30
-35
-40
-45
-50
LET = 82 GOLD
280
LET = 37 BROMINE
LET = 60 IODINE
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
3
FSGYE234R
Performance Curves
1E-3
10
LIMITING INDUCTANCE (H)
Unless Otherwise Specified
(Continued)
1E-4
I
D
, DRAIN (A)
ILM = 10A
30A
1E-5
100A
300A
1E-6
8
6
4
2
1E-7
10
0
-50
30
100
DRAIN SUPPLY (V)
300
1000
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
100
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
10
12V
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
0.1
1
10
100
1000
CHARGE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1ms
V
G
Q
GS
Q
GD
Q
G
10ms
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
I
D
, DRAIN TO SOURCE CURRENT (A)
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 6A
2.0
NORMALIZED r
DS(ON)
40
DESCENDING ORDER
V
GS
= 14V
30
V
GS
= 12V
V
GS
= 10V
V
GS
= 8V
20
V
GS
= 6V
1.5
1.0
0.5
10
V
GS
= 6 V
0
0.0
-80
-40
0
40
80
120
160
0
4
8
12
16
20
T
J
, JUNCTION TEMPERATURE (
o
C)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
4
FSGYE234R
Performance Curves
NORMALIZED THERMAL RESPONSE (Z
θJC
)
10
Unless Otherwise Specified
(Continued)
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-4
10
-3
10
-2
10
-1
10
0
P
DM
t
1
0.1
t
2
10
1
0.001
10
-5
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
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