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FQP11P06
— P-Channel QFET
®
MOSFET
November 2013
FQP11P06
P-Channel QFET
®
MOSFET
-60 V, -11.4 A, 175 mΩ
Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild s proprietary,
planar stripe, DMOS technology. This advanced
technology has been especially tailored to minimize on-
state resistance, provide superior switching performance,
and withstand a high energy pulse in the avalanche and
commutation modes. These devices are well suited for low
voltage applications such as automotive, DC/DC
converters, and high efficiency switching for power
management in portable and battery operated products.
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Embedded System
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