(Successful board soldering tests have verified the usability of this solution: V1, V2)
Module Specifications (V2 version only):
Utilizes Infineon OptiMOS™ Power MOSFET power devices
in a compact 70*40*25mm form factor (including active thermal design).
Wide input voltage range of 10V-18V, wide output voltage range of 0.8V-5.5V.
Peak output current up to 45A, continuous output current of 40A.
Conversion efficiency ≥94% at 40%-100% load.
Ripple less than 100mV across the entire load range, only 20mV at no load.
Integrated active thermal design and power-on indicator.
Externally controllable EN shutdown signal.
Module Specifications (V1 version only):
Utilizes Texas Instruments NexFET™ integrated half-bridge power devices.
Compact 70*40*25mm form factor (including active thermal design). Wide
input voltage range of 10V-15V, wide output voltage range of 0.8V-5.5V.
Peak output current up to 35A, continuous output current of 30A.
Conversion efficiency ≥ 96% at 40%-100% load.
Ripple less than 100mV across the full load range, and only 20mV under no-load.
Integrated active cooling and power-on indicator.
Externally controllable EN shutdown signal.
Chip Information:
Notes:
Active cooling is recommended for continuous currents greater than 10A, and is mandatory for currents greater than 15A!
Power MOSFETs and inductors require additional aluminum heatsinks. Fan dimensions are shown in the schematic (heatsink and fan installation diagrams are provided in the physical sample).
Input and output directions must not be reversed! The positive and negative terminals of each connector must not be reversed!
For outputs greater than 20A, it is recommended to add sufficient MLCCs and electrolytic capacitors at the load end.
The PCB layout with open windows requires soldering.
The project includes 4-layer and 6-layer PCB files; please use
the physical sample (V2) as needed.
Note: Except for the XT60 connector, other areas use silver-containing lead-free solder, so the solder joints are matte.



