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BUK9Y30-75B115

Description
Switching Voltage Regulators 93% Eff Buck-Boost Converter
Categorysemiconductor    Discrete semiconductor   
File Size694KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9Y30-75B115 Overview

Switching Voltage Regulators 93% Eff Buck-Boost Converter

BUK9Y30-75B115 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseLFPAK56-5
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage75 V
Id - Continuous Drain Current34 A
Rds On - Drain-Source Resistance28 mOhms
Vgs - Gate-Source Voltage15 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle Triple Source
Channel ModeEnhancement
PackagingReel
PackagingMouseReel
PackagingCut Tape
Fall Time83 ns
Height1.1 mm
Length5 mm
Pd - Power Dissipation85 W
Rise Time106 ns
Factory Pack Quantity1500
Transistor Type1 N-Channel
Typical Turn-Off Delay Time51 ns
Typical Turn-On Delay Time16 ns
Width4.1 mm
BUK9Y30-75B
N-channel TrenchMOS logic level FET
Rev. 04 — 10 April 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Q101 compliant
Suitable for thermally demanding
environments due to 175
°C
rating
1.3 Applications
12 V, 24 V and 42 V loads
General purpose power switching
Automotive systems
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
E
DS(AL)S
Quick reference
Parameter
drain-source voltage
drain current
total power dissipation
non-repetitive
drain-source
avalanche energy
gate-drain charge
Conditions
T
j
25
°C;
T
j
175
°C
V
GS
= 5 V; T
mb
= 25
°C;
see
Figure 1
and
4
T
mb
= 25
°C;
see
Figure 2
I
D
= 34 A; V
sup
75 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25
°C;
unclamped
V
GS
= 5 V; I
D
= 25 A;
V
DS
= 60 V; T
j
= 25
°C;
see
Figure 14
V
GS
= 5 V; I
D
= 15 A;
T
j
= 25
°C;
see
Figure 12
and
13
Min
-
-
-
-
Typ
-
-
-
-
Max
75
34
85
78
Unit
V
A
W
mJ
Avalanche ruggedness
Dynamic characteristics
Q
GD
-
9
-
nC
Static characteristics
R
DSon
drain-source on-state
resistance
-
25
30
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