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MPSW06RLRAG

Description
Bipolar Transistors - BJT 500mA 80V 1W NPN
CategoryDiscrete semiconductor    The transistor   
File Size96KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MPSW06RLRAG Overview

Bipolar Transistors - BJT 500mA 80V 1W NPN

MPSW06RLRAG Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging code29-10
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-226
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
MPSW05, MPSW06
One Watt Amplifier
Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR
3
2
BASE
Symbol
MPSW05
MPSW06
MPSW05
MPSW06
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
60
80
60
80
4.0
500
1.0
8.0
2.5
20
−55
to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
mW/°C
W
mW/°C
°C
12
1
2
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
1
EMITTER
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
W0x
AYWW
G
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
125
50
Unit
°C/W
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
= 5 or 6
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPSW05G
MPSW06G
MPSW06RLRA
MPSW06RLRAG
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
5000 Units/Bulk
5000 Units/Bulk
2000/Tape & Reel
2000/Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
August, 2010
Rev. 4
1
Publication Order Number:
MPSW05/D

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