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BUK6213-30A118

Description
MOSFET Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab)
Categorysemiconductor    Discrete semiconductor   
File Size115KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MOSFET Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab)

BUK6213-30A118 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current64 A
Rds On - Drain-Source Resistance10 mOhms
ConfigurationSingle
PackagingReel
Pd - Power Dissipation428 W
Factory Pack Quantity2500
Transistor Type1 N-Channel
Unit Weight0.139332 oz
DP
AK
BUK6213-30A
N-channel TrenchMOS intermediate level FET
Rev. 03 — 2 February 2011
Product data sheet
1. Product profile
1.1 General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for logic or standard level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
30
55
102
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 10 A;
T
j
= 25 °C; see
Figure 4;
see
Figure 5
-
10
13
mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 55 A; V
sup
30 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge V
GS
= 5 V; I
D
= 25 A;
V
DS
= 24 V
-
-
267
mJ
Dynamic characteristics
Q
GD
-
14
-
nC
[1]
Continuous current is limited by bondwires.
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