HCC/HCF4008B
4-BIT FULL ADDER WITH PARALLEL CARRY OUTPUT
.
.
.
.
.
.
.
4 SUM OUTPUTS PLUS PARALLEL LOOK-
AHERD CARRY-OUTPUT
HIGH-SPEED OPERATION-SUM IN-TO-SUM
OUT 160ns (typ.) : CARRY IN-TO-CARRY OUT
50ns (typ.) AT V
DD
= 10V, C
L
= 50pF
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
5V, 10V, AND 15V PARAMETRIC RATING
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N° 13A, ”STANDARD SPE-
CIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC4008BF
HCF4008BM1
HCF4008BEY
HCF4008BC1
PIN CONNECTIONS
DESCRIPTION
The
HCC4008B
(extended temperature range) and
HCF4008B
(intermediate temperature range) are
monolithic integrated circuits, available in 16-lead
dual in-line plastic or ceramic package and plastic
micropackage.
The
HCC/HCF4008B
types consist of four full adder
stages with fast look ahead carry provision from
stage to stage. Circuitry is included to provide a fast
”parallel-carry-out” to permit high-speed operation
in arithmetic sections using several HCC/HCF
4008B’s.
HCC/HCF4008B
inputs include the four sets of bits
to be added, A
1
to A
4
and B
1
to B
4
, in addition to the
”Carry In” bit from a previous section.
HCC/HCF4008B
outputs include the four sum bits,
S
1
to S
4
. In addition to the high speed ”parallel-carry-
out” which may be utilized at a succeeding
HCC/HCF4008B
section.
June 1989
1/13
HCC/HCF4008B
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
*
V
i
I
I
P
to t
Parameter
Supply Voltage :
HC C
Types
H CF
Types
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
o p
= Full Package-temperature Range
Operating Temperature :
HCC
Types
H CF
Types
Storage Temperature
Value
– 0.5 to + 20
– 0.5 to + 18
– 0.5 to V
DD
+ 0.5
±
10
200
100
– 55 to + 125
– 40 to + 85
– 65 to + 150
Unit
V
V
V
mA
mW
mW
°C
°C
°C
T
op
T
stg
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
* All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Parameter
Supply Voltage :
HCC
Types
HC F
Types
Input Voltage
Operating Temperature :
HCC
Types
H CF
Types
Value
3 to 18
3 to 15
0 to V
DD
– 55 to + 125
– 40 to + 85
Unit
V
V
V
°C
°C
2/13
HCC/HCF4008B
STATIC ELECTRICAL CHARACTERISTICS
(over recommended operating conditions)
Test Conditions
Symbol
Parameter
V
I
(V)
0/ 5
HCC 0/10
Types 0/15
0/20
0/ 5
HCF
0/10
Types
0/15
V
O H
Output High
Voltage
0/ 5
0/10
0/15
V
O L
Output Low
Voltage
5/0
10/0
15/0
V
IH
Input High
Voltage
0.5/4.5
1/9
4.5/0.5
9/1
0/ 5
HCC 0/ 5
Types 0/10
0/15
0/ 5
0/ 5
HCF
Types 0/10
0/15
I
OL
Output
Sink
Current
0/ 5
HCC
0/10
Types
0/15
0/ 5
HCF
0/10
Types
0/15
I
IH
, I
IL
Input
Leakage
Current
HCC 0/18
Types
HCF
0/15
Types
Any Input
2.5
4.6
9.5
13.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
0.4
0.5
1.5
< 1
< 1
< 1
< 1
< 1
< 1
< 1
< 1
< 1
< 1
V
O
(V)
Value
Unit
|I
O
| V
D D
T
L o w
*
25
°C
T
Hig h
*
(µA) (V)
Min. Max. Min. Typ. Max. Min. Max.
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
5
10
15
5
10
15
5
10
15
18
Any Input
15
–2
– 0.64
– 1.6
– 4.2
– 1.53
– 0.52
– 1.3
– 3.6
0.64
1.6
4.2
0.52
1.3
3.6
±
0.1
±
0.3
3.5
7
11
1.5
3
4
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 3.4 – 6.8
– 1.36 – 3.2
– 0.44 – 1
– 1.1 – 2.6
– 3.0 – 6.8
0.51
1.3
3.4
0.44
1.1
3.0
1
2.6
6.8
1
2.6
6.8
±10
– 5
±
0.1
±10
– 5
±
0.3
5
7.5
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
– 1.15
– 0.36
– 0.9
– 2.4
– 1.1
– 0.36
– 0.9
– 2.4
0.36
0.9
2.4
0.36
0.9
2.4
±
1
±
1
µA
mA
mA
5
10
20
100
20
40
80
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
V
V
0.04
0.04
0.04
0.08
0.04
0.04
0.04
5
10
20
100
20
40
80
4.95
9.95
14.95
0.05
0.05
0.05
V
V
150
300
600
3000
150
300
600
µA
I
L
Quiescent
Current
1.5/13.5 < 1
V
IL
Input Low
Voltage
13.5/1.5 < 1
I
OH
Output
Drive
Current
C
I
Input Capacitance
pF
* T
Lo w
= – 55°C for
HCC
device : – 40°C for
HCF
device.
* T
High
= + 125°C for
HCC
device : + 85°C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5 V min. with V
DD
= 15V.
4/13
HCC/HCF4008B
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25
°C,
C
L
= 50 pF, R
L
= 200 kΩ,
typical temperature coefficient for all V
DD
values is 0.3 %/°C, all input rise and fall times = 20 ns)
Symbol
Parameter
Sum In to
Sum Out
Test Conditions
V
D D
(V)
Min.
5
10
15
Carry In to
Sum Out
5
10
15
Sum In to
Carry Out
5
10
15
Carry In to
Carry Out
5
10
15
t
THL
, t
T L H
Transition Time
5
10
15
Value
Typ.
400
160
115
370
155
115
200
90
65
100
50
40
100
50
40
Max.
800
320
230
740
310
230
400
180
130
200
100
80
200
100
80
ns
ns
Unit
t
P L H
, t
P HL
Propagation Delay
Time
Typical Output Low (sink) Current.
Minimum Output Low (sink) Current Charac-
teristics.
5/13