To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FQP4N90C / FQPF4N90C
— N-Channel QFET
®
MOSFET
December
2013
FQP4N90C / FQPF4N90C
N-Channel QFET
®
MOSFET
900
V,
4.0
A,
4.2
Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
•
4.0
A, 900 V, R
DS(on)
=
4.2
Ω
(Max.) @ V
GS
= 10 V,
I
D
=
2.0
A
• Low Gate Charge (Typ.
17
nC)
• Low Crss (Typ.
5.6
pF)
• 100% Avalanche Tested
D
G
D
S
TO-220
G
D
S
G
TO-220F
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQP4N90C
900
4
2.3
16
FQPF4N90C
4*
2.3 *
16 *
±
30
570
4
14
4.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum
Lead Temperature
for
Soldering,
1/8" from
Case
for 5
Seconds.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
140
1.12
-55 to +150
300
47
0.38
*
Drain current limited by maximum junction temperature.
I am working on an I/O card driver for vxWorks. Since it is my first time to work on a driver, I wrote a test program to test whether the card can be detected and work properly. The program's function...
[size=4]The reasons for the failure of chip inductors are mainly manifested in five aspects, namely, failure caused by solder resistance, solderability, poor soldering, open circuit on the machine, ma...
LCD display 320x240 color LCD display I didn't look too closely at the underlying code, but there are mainly two functions used to display text: (1) GrStringDraw(*pContext, *pcString, lLength, lX, lY,...
I was too embarrassed to start a new post to write about my progress because I was always stuck. But this time, it's not a topic that can be easily categorized as hardware, so I just started a new pos...
[i=s]This post was last edited by paulhyde on 2014-9-15 03:42[/i]The line-following car adopts the tracking mode, patrols the line and completes the race through infrared detection, and finally reache...
Real-time operating system RTOS
京公网安备 11010802033920号
EEWORLD
