BLF7G20LS-160P118 datasheet, PDF

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BLF7G20LS-160P118: DescriptionRF MOSFET Transistors BLF7G20LS-160P/ACC-4L/REEL13//; Categorysemiconductor Discrete semiconductor; File Size101KB，9 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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RF MOSFET Transistors BLF7G20LS-160P/ACC-4L/REEL13//

BLF7G20LS-160P118 Parametric

Parameter Name	Attribute value
Product Category	RF MOSFET Transistors
Manufacturer	NXP
Transistor Polarity	N-Channel
Id - Continuous Drain Current	14 A
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	150 mOhms
Technology	Si
Gain	17.5 dB
Output Power	135 W
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Package / Case	SOT-1121B
Configuration	Dual
Height	4.75 mm
Length	20.7 mm
Operating Frequency	1.8 GHz to 2 GHz
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	13 V
Vgs th - Gate-Source Threshold Voltage	1.9 V
Width	19.94 mm

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BLF7G20L-160P;

BLF7G20LS-160P

Power LDMOS transistor

Rev. 01 — 22 June 2010

Objective data sheet

1. Product profile

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to 2000 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25

C in a common source class-AB production test circuit.

Mode of operation

GSM EDGE

(MHz)

1805 to 1880

(mA)

850

(V)

L(AV)

(W)

135

(dB)

17.5

18.5

(%)

ACPR

400k

(dBc)

−61

ACPR

600k

(dBc)

−74

EVM

rms

(%)

2.5

1.2 Features and benefits

Excellent ruggedness

High efficiency

Low R

providing excellent thermal stability

Designed for broadband operation (1800 MHz to 2000 MHz)

Lower output capacitance for improved performance in Doherty applications

Designed for low-memory effects providing excellent digital pre-distortion capability

Internally matched for ease of use

Integrated ESD protection

Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

1.3 Applications

RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to

2000 MHz frequency range

BLF7G20LS-160P118 Related Products

	BLF7G20LS-160P118	BLF7G20L-160P,118	BLF7G20LS-160P,118	BLF7G20LS-160P,112	BLF7G20L-160P118	BLF7G20LS-160P112	BLF7G20L-160P,112
Description	RF MOSFET Transistors BLF7G20LS-160P/ACC-4L/REEL13//	RF mosfet power single 65v 0.15ohms	RF mosfet power single 65v 0.15ohms	RF mosfet power single 65v 0.15ohms	RF MOSFET Transistors BLF7G20L-160P/ACC-4L/REEL13//	RF MOSFET Transistors BLF7G20LS-160P/ACC-4L/TUBE-BUL	RF MOSFET Transistors BLF7G20L-160P/ACC-4L/TUBE-BULK
Product Category	RF MOSFET Transistors	-	-	-	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
Manufacturer	NXP	-	-	-	NXP	NXP	NXP
Transistor Polarity	N-Channel	-	-	-	N-Channel	N-Channel	N-Channel
Id - Continuous Drain Current	14 A	-	-	-	14 A	14 A	14 A
Vds - Drain-Source Breakdown Voltage	65 V	-	-	-	65 V	65 V	65 V
Rds On - Drain-Source Resistance	150 mOhms	-	-	-	150 mOhms	150 mOhms	150 mOhms
Technology	Si	-	-	-	Si	Si	Si
Gain	17.5 dB	-	-	-	17.5 dB	17.5 dB	17.5 dB
Output Power	135 W	-	-	-	135 W	135 W	135 W
Maximum Operating Temperature	+ 150 C	-	-	-	+ 150 C	+ 150 C	+ 150 C
Mounting Style	SMD/SMT	-	-	-	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-1121B	-	-	-	SOT-1121A	SOT-1121B	SOT-1121A
Configuration	Dual	-	-	-	Dual	Dual	Dual
Height	4.75 mm	-	-	-	4.75 mm	4.75 mm	4.75 mm
Length	20.7 mm	-	-	-	34.16 mm	20.7 mm	34.16 mm
Operating Frequency	1.8 GHz to 2 GHz	-	-	-	1.8 GHz to 2 GHz	1.8 GHz to 2 GHz	1.8 GHz to 2 GHz
Type	RF Power MOSFET	-	-	-	RF Power MOSFET	RF Power MOSFET	RF Power MOSFET
Vgs - Gate-Source Voltage	13 V	-	-	-	13 V	13 V	13 V
Vgs th - Gate-Source Threshold Voltage	1.9 V	-	-	-	1.9 V	1.9 V	1.9 V
Width	19.94 mm	-	-	-	19.94 mm	19.94 mm	19.94 mm

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