FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20866-2E
FLASH MEMORY
CMOS
4M (512K
×
8/256K
×
16) BIT
MBM29DL400TC
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/MBM29DL400BC
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s
FEATURES
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
• Simultaneous operations
Read-while-Erase or Read-while-Program
• Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
• Compatible with JEDEC-standard world-wide pinouts (Pin compatible with MBM29LV400TC/BC)
48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
• Minimum 100,000 program/erase cycles
• High performance
55 ns maximum access time
• Sector erase architecture
Two 16K byte, four 8K bytes, two 32K byte, and six 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low V
CC
write inhibit
≤
2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
(Continued)
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
MBM29DL400TC
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/MBM29DL400BC
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GENERAL DESCRIPTION
The MBM29DL400TC/BC are a 4M-bit, 3.0 V-only Flash memory organized as 512K bytes of 8 bits each or
256K words of 16 bits each. The MBM29DL400TC/BC are offered in a 48-pin TSOP(I) package. These devices
are designed to be programmed in-system with the standard system 3.0 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM
programmers.
MBM29DL400TC/BC provides simultaneous operation which can read a data while program/erase. The
simultaneous operation architecture provides simultaneous operation by dividing the memory space into two
banks. The device can allow a host system to program or erase in one bank, then immediately and simultaneously
read from the other bank.
The standard MBM29DL400TC/BC offer access times 55 ns and 120 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
The MBM29DL400TC/BC are pin and command set compatible with JEDEC standard E
2
PROMs. Commands
are written to the command register using standard microprocessor write timings. Register contents serve as
input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the devices
is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29DL400TC/BC are programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the devices automatically time the erase pulse widths and
verify proper cell margin.
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29DL400TC/BC are erased when shipped from the
factory.
The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
7
,
by the Toggle Bit feature on DQ
6
, or the RY/BY output pin. Once the end of a program or erase cycle has been
completed, the devices internally reset to the read mode.
Fujitsu’s Flash technology combines years of EPROM and E2PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29DL400TC/BC memories electrically erase the entire chip
or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one
byte/word at a time using the EPROM programming mechanism of hot electron injection.
3
MBM29DL400TC
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/MBM29DL400BC
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s
FLEXIBLE SECTOR-ERASE ARCHITECTURE
• Two 16K bytes, four 8K bytes, two 32K bytes, and six 64K bytes
• Individual-sector, multiple-sector, or bulk-erase capability
• Individual or multiple-sector protection is user definable.
(X8)
16K byte/8K word
(X16)
64K byte/32K word
(X8)
(X16)
7FFFFH 3FFFFH
7C000H 3E000H
32K byte/16K word
74000H 3A000H
8K byte/4K word
72000H 39000H
bank 1
8K byte/4K word
70000H 38000H
8K byte/4K word
6E000H 37000H
8K byte/4K word
6C000H 36000H
32K byte/16K word
64000H 32000H
16K byte/8K word
60000H 30000H
64K byte/32K word
50000H 28000H
64K byte/32K word
40000H 20000H
64K byte/32K word
bank 2
30000H 18000H
64K byte/32K word
20000H 10000H
64K byte/32K word
10000H 08000H
64K byte/32K word
00000H 00000H
16K byte/8K word
32K byte/16K word
8K byte/4K word
bank 1
8K byte/4K word
8K byte/4K word
8K byte/4K word
32K byte/16K word
16K byte/8K word
64K byte/32K word
64K byte/32K word
bank 2
64K byte/32K word
64K byte/32K word
64K byte/32K word
7FFFFH 3FFFFH
70000H 38000H
60000H 30000H
50000H 28000H
40000H 20000H
30000H 18000H
20000H 10000H
1C000H 0C000H
14000H 0A000H
12000H 09000H
10000H 08000H
0E000H 07000H
0C000H 06000H
04000H 02000H
00000H 00000H
MBM29DL400TC Sector Architecture
MBM29DL400BC Sector Architecture
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