MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC320FP/D
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
•
Blocking Voltage to 800 Volts
•
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
•
Gate Triggering Guaranteed in Three Modes (MAC320FP Series) or
Four Modes (MAC320AFP Series)
MAC320FP
Series
MAC320AFP
Series
ISOLATED TRIACs
THYRISTORS
20 AMPERES RMS
200 thru 800 VOLTS
MT2
G
MT1
CASE 221C-02
STYLE 3
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC320-4FP, MAC320A4FP
MAC320-6FP, MAC320A6FP
MAC320-8FP, MAC320A8FP
MAC320-10FP, MAC320A10FP
Peak Gate Voltage
On-State RMS Current (TC = +75°C, Full Cycle Sine Wave 50 to 60 Hz)(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T C = +75°C,
preceded and followed by rated current)
Peak Gate Power (T C = +75°C, Pulse Width = 2
µs)
Average Gate Power (T C = +75°C, t = 8.3 ms)
Peak Gate Current
RMS Isolation Voltage (TA = 25°C, Relative Humidity
Operating Junction Temperature
Storage Temperature Range
Symbol
VDRM
200
400
600
800
VGM
IT(RMS)
ITSM
PGM
PG(AV)
10
20
150
20
0.5
2
1500
–40 to +125
–40 to +150
Volts
Amps
Amps
Watts
Watt
Amps
Volts
°C
°C
Value
Unit
Volts
p
20%)
IGM
V(ISO)
TJ
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
R
θCS
R
θJA
Max
1.8
2.2 (typ)
60
Unit
°C/W
°C/W
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the
plastic body.
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
1
MAC320FP Series MAC320AFP Series
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Peak Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25°C
TJ = +125°C
Symbol
IDRM
—
—
—
—
1.4
10
2
1.7
Min
Typ
Max
Unit
µA
mA
Volts
mA
Peak On-State Voltage (Either Direction)
(ITM = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
Peak Gate Trigger Current
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2
µs)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
p
2%)
VTM
IGT
—
—
—
—
—
VGT
—
—
—
—
50
50
50
75
Volts
Peak Gate Trigger Voltage
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2
µs)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 , TJ = +110°C)
MT2(+), G(+); MT2(+), G(–)
MT2(–), G(–); MT2(–), G(+) “A” SUFFIX ONLY
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
Turn-On Time
(VD = Rated VDRM, ITM = 28 A, IGT = 120 mA,
Rise Time = 0.1
µs,
Pulse Width = 2
µs)
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 28 A, Commutating di/dt = 10 A/ms,
Gate Unenergized, TC = +75°C)
—
—
—
—
0.2
0.2
IH
—
0.9
0.9
1.1
1.4
—
—
6
2
2
2
2.5
—
—
40
mA
t gt
—
1.5
10
µs
dv/dt(c)
—
5
—
V/µs
TYPICAL CHARACTERISTICS
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
130
PD(AV) , AVERAGE POWER (WATT)
120
110
100
90
80
70
60
50
0
2.0
α
α
= Conduction
Angle
4.0 6.0 8.0
10
12
14
16
IT(RMS), RMS ON-STATE CURRENT (AMP)
18
20
α
180°
dc
α
= 30°
60°
90°
40
35
30
25
20
15
10
5.0
0
0
2.0
4.0 6.0 8.0
10
12
14
16
IT(RMS), RMS ON-STATE CURRENT (AMP)
18
20
60°
α
= 30°
α
α
= Conduction
Angle
90°
α
180°
dc
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
2
Motorola Thyristor Device Data
MAC320FP Series MAC320AFP Series
VGTM , GATE TRIGGER VOLTAGE (NORMALIZED)
3
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
100
70
50
30
20
i TM , INSTANTANEOUS FORWARD CURRENT (AMP)
0.7
0.5
TJ = 25°C
125°C
1
10
7
5
3
2
0.3
–60 –40
–20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Gate Trigger Voltage
I GTM , GATE TRIGGER CURRENT (NORMALIZED)
3
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1
0.7
0.5
0.3
0.2
1
0.7
0.5
0.3
–60
0.1
–40
–20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
120
140
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 4. Typical Gate Trigger Current
Figure 5. Maximum On-State Characteristics
Motorola Thyristor Device Data
3
MAC320FP Series MAC320AFP Series
3
I H , HOLDING CURRENT (NORMALIZED)
2
300
TSM , PEAK SURGE CURRENT (AMP)
GATE OPEN
APPLIES TO EITHER DIRECTION
200
1
0.7
0.5
100
70
50
TC = 80°C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
1
2
3
NUMBER OF CYCLES
5
7
10
0.3
–60
30
–40
–20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Holding Current
1
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.5
0.2
0.1
0.05
0.02
0.01
0.1
Figure 7. Maximum Nonrepetitive Surge Current
Z
θJC(t)
= r(t)
•
R
θJC
0.2
0.5
1
2
5
10
20
50
100
200
500
1k
2k
5k
10 k
t, TIME (ms)
Figure 8. Thermal Response
4
Motorola Thyristor Device Data
MAC320FP Series MAC320AFP Series
PACKAGE DIMENSIONS
–B–
P
–T–
F
N
E
C
S
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
Z
INCHES
MIN
MAX
0.680
0.700
0.388
0.408
0.175
0.195
0.025
0.040
0.340
0.355
0.140
0.150
0.100 BSC
0.110
0.155
0.018
0.028
0.500
0.550
0.045
0.070
0.049
–––
0.270
0.290
0.480
0.500
0.090
0.120
0.105
0.115
0.070
0.090
MILLIMETERS
MIN
MAX
17.28
17.78
9.86
10.36
4.45
4.95
0.64
1.01
8.64
9.01
3.56
3.81
2.54 BSC
2.80
3.93
0.46
0.71
12.70
13.97
1.15
1.77
1.25
–––
6.86
7.36
12.20
12.70
2.29
3.04
2.67
2.92
1.78
2.28
H
–Y–
Q
1 2 3
A
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
K
Z
L
G
D
3 PL
J
R
0.25 (0.010)
M
B
M
Y
CASE 221C-02
Motorola Thyristor Device Data
5
京公网安备 11010802033920号
EEWORLD
