Variable Capacitance Diode, High Frequency to Very High Frequency, 180pF C(T), 12V, Silicon, Hyperabrupt, DO-7,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Minimum breakdown voltage | 12 V |
| Configuration | SINGLE |
| Minimum diode capacitance ratio | 10 |
| Nominal diode capacitance | 180 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | HIGH FREQUENCY TO VERY HIGH FREQUENCY |
| JEDEC-95 code | DO-7 |
| JESD-30 code | O-LALF-W2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| minimum quality factor | 200 |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Varactor Diode Classification | HYPERABRUPT |
| Base Number Matches | 1 |
| KV1503 | KV1703 | KV1403 | KV1402 | KV1802 | KV1602 | |
|---|---|---|---|---|---|---|
| Description | Variable Capacitance Diode, High Frequency to Very High Frequency, 180pF C(T), 12V, Silicon, Hyperabrupt, DO-7, | Variable Capacitance Diode, High Frequency to Very High Frequency, 325pF C(T), 12V, Silicon, Hyperabrupt, DO-7, | Variable Capacitance Diode, High Frequency to Very High Frequency, 81.5pF C(T), 12V, Silicon, Hyperabrupt, DO-7, | Variable Capacitance Diode, High Frequency to Very High Frequency, 81.5pF C(T), 12V, Silicon, Hyperabrupt, DO-7, | Variable Capacitance Diode, High Frequency to Very High Frequency, 500pF C(T), 12V, Silicon, Hyperabrupt, DO-14 | Variable Capacitance Diode, High Frequency to Very High Frequency, 255pF C(T), 12V, Silicon, Hyperabrupt, DO-7 |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | compliant | compliant | compliant | compliant | unknow | compli |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Minimum breakdown voltage | 12 V | 12 V | 12 V | 12 V | 12 V | 12 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum diode capacitance ratio | 10 | 10 | 10 | 10 | 12 | 10 |
| Nominal diode capacitance | 180 pF | 325 pF | 81.5 pF | 81.5 pF | 500 pF | 255 pF |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
| frequency band | HIGH FREQUENCY TO VERY HIGH FREQUENCY | HIGH FREQUENCY TO VERY HIGH FREQUENCY | HIGH FREQUENCY TO VERY HIGH FREQUENCY | HIGH FREQUENCY TO VERY HIGH FREQUENCY | HIGH FREQUENCY TO VERY HIGH FREQUENCY | HIGH FREQUENCY TO VERY HIGH FREQUENCY |
| JEDEC-95 code | DO-7 | DO-7 | DO-7 | DO-7 | DO-14 | DO-7 |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| minimum quality factor | 200 | 200 | 200 | 200 | 150 | 200 |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Varactor Diode Classification | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT |
| Maker | Microsemi | Microsemi | Microsemi | - | Microsemi | Microsemi |
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