Standard SRAM, 64KX4, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
| Parameter Name | Attribute value |
| Maker | Cypress Semiconductor |
| Parts packaging code | DIP |
| package instruction | DIP, DIP24,.3 |
| Contacts | 24 |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 45 ns |
| Other features | TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY |
| I/O type | COMMON |
| JESD-30 code | R-CDIP-T24 |
| memory density | 262144 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of terminals | 24 |
| word count | 65536 words |
| character code | 64000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 64KX4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP24,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 |
| Maximum seat height | 5.08 mm |
| Maximum standby current | 0.02 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 0.12 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | PALLADIUM GOLD |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| width | 7.62 mm |
| Base Number Matches | 1 |
| 5962-8868102LX | 5962-9322501MXX | 5962-9322501MYX | 5962-9322503MYX | 5962-9322502MYX | 5962-9322503MXX | 5962-9322502MXX | 5962-8868101LX | |
|---|---|---|---|---|---|---|---|---|
| Description | Standard SRAM, 64KX4, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 | Standard SRAM, 64KX4, 45ns, CMOS, CDIP28, CERAMIC, DIP-28 | Standard SRAM, 64KX4, 45ns, CMOS, CQCC28, CERAMIC, LCC-28 | Standard SRAM, 64KX4, 25ns, CMOS, CQCC28, CERAMIC, LCC-28 | Standard SRAM, 64KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28 | Standard SRAM, 64KX4, 25ns, CMOS, CDIP28, CERAMIC, DIP-28 | Standard SRAM, 64KX4, 35ns, CMOS, CDIP28, CERAMIC, DIP-28 | Standard SRAM, 64KX4, 35ns, CMOS, CDIP24, CERAMIC, DIP-24 |
| Parts packaging code | DIP | DIP | QLCC | QLCC | QLCC | DIP | DIP | DIP |
| package instruction | DIP, DIP24,.3 | DIP, | QCCN, | QCCN, | QCCN, | DIP, | DIP, | DIP, DIP24,.3 |
| Contacts | 24 | 28 | 28 | 28 | 28 | 28 | 28 | 24 |
| Reach Compliance Code | unknown | unknow | unknow | unknow | unknow | unknow | unknown | unknown |
| ECCN code | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| Maximum access time | 45 ns | 45 ns | 45 ns | 25 ns | 35 ns | 25 ns | 35 ns | 35 ns |
| JESD-30 code | R-CDIP-T24 | R-GDIP-T28 | R-CQCC-N28 | R-CQCC-N28 | R-CQCC-N28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T24 |
| memory density | 262144 bit | 262144 bi | 262144 bi | 262144 bi | 262144 bi | 262144 bi | 262144 bit | 262144 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 24 | 28 | 28 | 28 | 28 | 28 | 28 | 24 |
| word count | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| character code | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| organize | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP | DIP | QCCN | QCCN | QCCN | DIP | DIP | DIP |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Filter level | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | YES | YES | YES | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | DUAL | DUAL | QUAD | QUAD | QUAD | DUAL | DUAL | DUAL |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
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