HYB3165165TL-50 datasheet, PDF

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HYB3165165TL-50: Description4M x 16-Bit Dynamic RAM; Categorystorage storage; File Size396KB，30 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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HYB3165165TL-50 Overview

4M x 16-Bit Dynamic RAM

HYB3165165TL-50 Parametric

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	,
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	50 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
JESD-30 code	R-PDSO-G54
memory density	67108864 bi
Memory IC Type	EDO DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	54
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal location	DUAL

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4M x 16-Bit Dynamic RAM

(4k & 8k Refresh, EDO-version)

HYB 3164165T(L) -50/-60

HYB 3165165T(L) -50/-60

Preliminary Information

•

4 194 304 words by 16-bit organization

0 to 70 ˚C operating temperature

Fast access and cycle time

RAS access time:

50 ns (-50 version)

60 ns (-60 version)

Cycle time:

84 ns (-50 version)

104 ns (-60 version)

CAS access time:

13 ns ( -50 version)

15 ns ( -60 version)

Hyper page mode (EDO) cycle time

20 ns (-50 version)

25 ns (-60 version)

Single + 3.3 V (± 0.3V) power supply

Low power dissipation

max. 396 active mW ( HYB 3164165T(L)-50)

max. 360 active mW ( HYB 3164165T(L)-60)

max. 504 active mW ( HYB 3165165T(L)-50)

max. 432 active mW ( HYB 3165165T(L)-60)

7.2 mW standby (TTL)

720 W standby (MOS)

14.4 mW Self Refresh (L-version only)

Read, write, read-modify-write, CAS-before-RAS refresh (CBR),

RAS-only refresh, hidden refresh and self refresh modes

Hyper page mode (EDO) capability

2 CAS / 1 WE byte control

8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165T(L))

4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165165T(L))

Plastic Package:

P-TSOPII-54-1 500 mil

HYB 3164(5)165T(L)

Semiconductor Group

HYB3165165TL-50 Related Products

	HYB3165165TL-50	HYB3164165T	HYB3164165T-50	HYB3164165TL-50	HYB3164165TL-60	HYB3164165T-60	HYB3165165T-50	HYB3165165TL-60	HYB3165165T-60
Description	4M x 16-Bit Dynamic RAM	4M x 16-Bit Dynamic RAM	4M x 16-Bit Dynamic RAM	4M x 16-Bit Dynamic RAM	4M x 16-Bit Dynamic RAM	4M x 16-Bit Dynamic RAM	4M x 16-Bit Dynamic RAM	4M x 16-Bit Dynamic RAM	4M x 16-Bit Dynamic RAM
Maker	SIEMENS	-	SIEMENS	SIEMENS	SIEMENS	SIEMENS	SIEMENS	SIEMENS	-
Reach Compliance Code	unknow	-	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FAST PAGE WITH EDO	-	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	50 ns	-	50 ns	50 ns	60 ns	60 ns	50 ns	60 ns	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	-	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
JESD-30 code	R-PDSO-G54	-	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
memory density	67108864 bi	-	67108864 bi	67108864 bi	67108864 bi	67108864 bi	67108864 bi	67108864 bi	67108864 bi
Memory IC Type	EDO DRAM	-	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM
memory width	16	-	16	16	16	16	16	16	16
Number of functions	1	-	1	1	1	1	1	1	1
Number of ports	1	-	1	1	1	1	1	1	1
Number of terminals	54	-	54	54	54	54	54	54	54
word count	4194304 words	-	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	-	4000000	4000000	4000000	4000000	4000000	4000000	4000000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	-	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	4MX16	-	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	-	8192	8192	8192	8192	4096	4096	4096
self refresh	YES	-	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	-	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	-	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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