IRFP354 datasheet, PDF - EEWORLD Datasheet

IRFP354: DescriptionPower MOSFET(Vdss=450V, Rds(on)=0.35ohm, Id=14A); CategoryDiscrete semiconductor The transistor; File Size206KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRFP354 Overview

Power MOSFET(Vdss=450V, Rds(on)=0.35ohm, Id=14A)

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compli
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	450 V
Maximum drain current (Abs) (ID)	14 A
Maximum drain current (ID)	14 A
Maximum drain-source on-resistance	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247AC
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	190 W
Maximum power dissipation(Abs)	190 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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