BH62UV8000DI datasheet, PDF - EEWORLD Datasheet

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BH62UV8000DI: DescriptionUltra Low Power/High Speed CMOS SRAM; File Size125KB，9 Pages; ManufacturerBSI; Websitehttp://www.brilliancesemi.com/

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BH62UV8000DI Overview

Ultra Low Power/High Speed CMOS SRAM

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BSI

FEATURES

Ultra Low Power/High Speed CMOS SRAM

1M X 8 bit

DESCRIPTION

BH62UV8000

Wide V

low operation voltage : 1.65V ~ 3.6V

Ultra low power consumption :

= 3.0V

Operation current : 5.0mA at 70ns at 25

1.5mA at 1MHz at 25

Standby current : 2.5uA at 25

= 2.0V

Data retention current : 2.5uA at 25

High speed access time :

-70

70ns at 1.8V at 85

Automatic power down when chip is deselected

Easy expansion with CE1, CE2 and OE options

Three state outputs and TTL compatible

Fully static operation, no clock, no refreash

Data retention supply voltage as low as 1.0V

The BH62UV8000 is a high performance, ultra low power CMOS Static

Random Access Memory organized as 1,048,576 by 8 bits and

operates in a wide range of 1.65V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with typical operating current of 1.5mA at

1MHz at 3.6V/25

C and maximum access time of 70ns at 1.8V/85

Easy memory expansion is provided by an active LOW chip enable

(CE1), an active HIGH chip enable (CE2) and active LOW output

enable (OE) and three-state output drivers.

The BH62UV8000 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BH62UV8000 is available in DICE form and 48-ball BGA package.

PRODUCT FAMILY

PRODUCT

FAMILY

OPERATING

TEMPERATURE

RANGE

SPEED

(ns)

=1.8~3.6V

POWER CONSUMPTION

STANDBY

CCSB1

, Max)

Operating

, Max)

PKG TYPE

=3.6V V

=1.8V V

=3.6V V

=1.8V

C to +70

BH62UV8000AI

1.65V ~ 3.6V

BH62UV8000DI

-25

C to +85

13uA

10uA

10mA

7mA

BGA-48-0608

DICE

15uA

12uA

10mA

7mA

PIN CONFIGURATIONS

CE2

BLOCK DIAGRAM

CE1

DQ0

D04

A12

A11

A10

Address

Input

Buffer

Row

Decoder

1024

Memory Array

1024 x 18192

VSS

DQ1

A17

DQ5

VCC

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Data

Input

Buffer

8192

Column I/O

Write Driver

Sense Amp

1024

Column Decoder

Control

Address Input Buffer

VCC

DQ2

VSS

A16

DQ6

VSS

A14

A15

DQ7

Data

Output

Buffer

A12

A13

CE1

CE2

GND

A18

A10

A11

A19

A19 A18 A17 A15 A14 A13 A16 A2 A1 A0

48-ball BGA top view

Brilliance Semiconductor, Inc.

reserves the right to modify document contents without notice.

Detailed product characteristic test report is available upon request and being accepted.

R0201-BH62UV8000

Revision 1.0

Jul.

2005

BH62UV8000DI Related Products

	BH62UV8000DI	BH62UV8000AI	BH62UV8000AIG70	BH62UV8000DIG70	BH62UV8000	BH62UV8000AI-70	BH62UV8000DI-70
Description	Ultra Low Power/High Speed CMOS SRAM	Ultra Low Power/High Speed CMOS SRAM	Ultra Low Power/High Speed CMOS SRAM	Ultra Low Power/High Speed CMOS SRAM	Ultra Low Power/High Speed CMOS SRAM	Ultra Low Power/High Speed CMOS SRAM	Ultra Low Power/High Speed CMOS SRAM

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