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K5A3280YBC-T855

Description
MCP MEMORY
Categorystorage    storage   
File Size619KB,45 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K5A3280YBC-T855 Overview

MCP MEMORY

K5A3280YBC-T855 Parametric

Parameter NameAttribute value
MakerSAMSUNG
package instructionFBGA, BGA69,10X10,32
Reach Compliance Codecompli
Maximum access time80 ns
JESD-30 codeS-PBGA-B69
Memory IC TypeMEMORY CIRCUIT
Mixed memory typesFLASH+SRAM
Number of terminals69
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA69,10X10,32
Package shapeSQUARE
Package formGRID ARRAY, FINE PITCH
power supply3 V
Certification statusNot Qualified
Maximum standby current0.000015 A
Maximum slew rate0.05 mA
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
K5A3x80YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary
MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
Revision History
Revision No. History
0.0
Initial Draft
Draft Date
November 6, 2002
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 0.0
November 2002

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Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG -
package instruction FBGA, BGA69,10X10,32 FBGA, BGA69,10X10,32 FBGA, BGA69,10X10,32 FBGA, BGA69,10X10,32 FBGA, BGA69,10X10,32 FBGA, BGA69,10X10,32 FBGA, BGA69,10X10,32 FBGA, BGA69,10X10,32 -
Reach Compliance Code compli compli compli compli compli compli compli compli -
Maximum access time 80 ns 70 ns 70 ns 80 ns 70 ns 80 ns 70 ns 80 ns -
JESD-30 code S-PBGA-B69 S-PBGA-B69 S-PBGA-B69 S-PBGA-B69 S-PBGA-B69 S-PBGA-B69 S-PBGA-B69 S-PBGA-B69 -
Memory IC Type MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT -
Mixed memory types FLASH+SRAM FLASH+SRAM FLASH+SRAM FLASH+SRAM FLASH+SRAM FLASH+SRAM FLASH+SRAM FLASH+SRAM -
Number of terminals 69 69 69 69 69 69 69 69 -
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C -
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code FBGA FBGA FBGA FBGA FBGA FBGA FBGA FBGA -
Encapsulate equivalent code BGA69,10X10,32 BGA69,10X10,32 BGA69,10X10,32 BGA69,10X10,32 BGA69,10X10,32 BGA69,10X10,32 BGA69,10X10,32 BGA69,10X10,32 -
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE -
Package form GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH -
power supply 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Maximum standby current 0.000015 A 0.000015 A 0.000015 A 0.000015 A 0.000015 A 0.000015 A 0.000015 A 0.000015 A -
Maximum slew rate 0.05 mA 0.05 mA 0.05 mA 0.05 mA 0.05 mA 0.05 mA 0.05 mA 0.05 mA -
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V -
surface mount YES YES YES YES YES YES YES YES -
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS -
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL -
Terminal form BALL BALL BALL BALL BALL BALL BALL BALL -
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm -
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM -
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