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SIDC30D120F6

Description
35 A, 1200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size206KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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SIDC30D120F6 Overview

35 A, 1200 V, SILICON, RECTIFIER DIODE

SIDC30D120F6 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeDIE
package instruction5.50 X 5.50 MM, DIE-1
Contacts1
Reach Compliance Code_compli
ECCN codeEAR99
applicationFAST SOFT RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeS-XUUC-N1
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current35 A
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Preliminary
SIDC30D120F6
Fast switching diode chip in EMCON-Technology
FEATURES:
1200V EMCON technology 120 µm chip
soft, fast switching
low reverse recovery charge
small temperature coefficient
A
This chip is used for:
EUPEC power modules and
discrete devices
Applications:
SMPS, resonant applications,
drives
C
Chip Type
SIDC30D120F6
V
R
1200V
I
F
35A
Die Size
5.5 x 5.5 mm
2
Package
sawn on foil
Ordering Code
Q67050-A4184-
A001
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metallisation
Cathode metallisation
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
5.5 x 5.5
30.25 / 23.33
4.78 x 4.78
120
150
180
482 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al,
≤500µm
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
µm
mm
deg
mm
2
Edited by INFINEON Technologies AI PS DD HV3, L 4185M, Edition 1, 8.01.2002

SIDC30D120F6 Related Products

SIDC30D120F6 SIDC30D120F6X1SA2
Description 35 A, 1200 V, SILICON, RECTIFIER DIODE DIODE GEN PURP 1.2KV 35A WAFER
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Parts packaging code DIE DIE
package instruction 5.50 X 5.50 MM, DIE-1 5.50 X 5.50 MM, DIE-1
Contacts 1 1
Reach Compliance Code _compli compliant
ECCN code EAR99 EAR99
application FAST SOFT RECOVERY FAST SOFT RECOVERY
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code S-XUUC-N1 S-XUUC-N1
Number of components 1 1
Phase 1 1
Number of terminals 1 1
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 35 A 35 A
Package body material UNSPECIFIED UNSPECIFIED
Package shape SQUARE SQUARE
Package form UNCASED CHIP UNCASED CHIP
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1200 V 1200 V
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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