Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
The DG411 series of monolithic quad analog switches was
designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35 µW)
with high speed (t
ON
: 110 ns), the DG411 family is ideally
suited for portable and battery powered industrial and military
applications.
To achieve high-voltage ratings and superior switching
performance, the DG411 series was built on Vishay
Siliconix’s high voltage silicon gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages up to the supply levels when
off.
The DG411, DG412 respond to opposite control logic as
shown in the Truth Table. The DG413 has two normally open
and two normally closed switches.
FEATURES
•
Halogen-free according to IEC 61249-2-21
Definition
• 44 V supply max. rating
• ± 15 V analog signal range
• On-resistance - R
DS(on)
: 25
• Fast switching - t
ON
: 110 ns
• Ultra low power - P
D
: 0.35 µW
• TTL, CMOS compatible
• Single supply capability
•
Compliant to RoHS Directive 2002/95/EC
BENEFITS
•
Widest dynamic range
• Low signal errors and distortion
• Break-bevor-make switching action
• Simple interfacing
APPLICATIONS
•
•
•
•
•
Precision automatic test equipment
Precision data acquisition
Communication systems
Battery powered systems
Computer peripherals
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411
Dual-In-Line and SOIC
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top V iew
16 IN
2
15 D
2
14 S
2
13 V+
12 V
L
11 S
3
10 D
3
9
IN
3
S
1
V-
NC
GND
S
4
Key
4
5
6
7
8
9
10
11
12
13
3
2
DG411
LCC
D
1
IN
1
NC IN
2
D
2
1
20
19
18
17
16
15
14
S
2
V+
NC
V
L
S
3
TRUTH TABLE
Logic
0
1
Logic “0”
0.8
V
Logic “1”
2.4
V
DG411
ON
OFF
DG412
OFF
ON
D
4
IN
4
NC IN
3
D
3
Top View
DG413
Dual-In-Line and SOIC
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top V iew
16 IN
2
15 D
2
14 S
2
13 V+
12 V
L
11 S
3
S
4
10 D
3
9
IN
3
9
D
4
10
Key
4
5
6
7
8
D
1
3
S
1
V-
NC
GND
2
DG413
LCC
IN
1
NC IN
2
1
20
D
2
19
18
17
16
15
14
S
2
V+
NC
V
L
S
3
TRUTH TABLE
Logic
0
1
Logic “0”
0.8
V
Logic “1”
2.4
V
SW
1
, SW
4
OFF
ON
SW
2
, SW
3
ON
OFF
11
12
13
D
3
IN
4
NC IN
3
Top View
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG411, DG412, DG413
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
Part Number
DG411DJ
DG411DJ-E3
DG412DJ
DG412DJ-E3
DG413DJ
DG413DJ-E3
DG411DY
DG411DY-E3
DG411DY-T1
DG411DY-T1-E3
DG412DY
DG412DY-E3
DG412DY-T1
DG412DY-T1-E3
DG413DY
DG413DY-E3
DG413DY-T1
DG413DY-T1-E3
DG411DQ-E3
DG411DQ-T1-E3
16-pin TSSOP
DG412DQ-E3
DG412DQ-T1-E3
DG413DQ-E3
DG413DQ-T1-E3
16-pin plastic DIP
- 40 °C to 85 °C
16-pin narrow SOIC
ABSOLUTE MAXIMUM RATINGS
Parameter
V + to V -
GND to V -
V
L
Digital Inputs
a
, V
S
, V
D
Continuous Current (Any terminal)
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
(AK, AZ suffix)
(DJ, DY suffix)
16-pin plastic DIP
c
Power Dissipation (Package)
b
16-pin narrow SOIC
16-pin CerDIP
LCC-20
e
e
d
Limit
44
25
(GND - 0.3) to (V+) + 0.3
(V-) -2 to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 150
- 65 to 125
470
600
900
900
Unit
V
mA
°C
mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V + or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 25 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
www.vishay.com
2
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG411, DG412, DG413
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Specified
V + = 15 V, V - = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A Suffix
- 55 °C to 125 °C
Temp.
b
Full
V + = 13.5 V, V - = - 13.5 V
I
S
= - 10 mA, V
D
=
±
8.5 V
V + = 16.5, V - = - 16.5 V
V
D
=
±
15.5 V, V
S
=
±
15.5 V
V + = 16.5 V, V - = - 16.5 V
V
S
= V
D
=
±
15.5 V
V
IN
under test = 0.8 V
V
IN
under test = 2.4 V
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
f = 1 MHz
Room
Room
25
Typ.
c
Min.
d
- 15
Max.
d
15
35
45
0.25
20
0.25
20
0.4
40
0.5
0.5
175
240
145
160
D Suffix
- 40 °C to 85 °C
Min.
d
- 15
Max.
d
15
35
45
0.25
5
0.25
5
0.4
10
0.5
0.5
175
220
145
160
Unit
V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Switch Off Leakage
Current
Channel On Leakage
Current
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
e
Channel-to-Channel
Crosstalk
e
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On
Capacitance
e
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
Symbol
V
ANALOG
R
DS(on)
I
S(off)
I
D(off)
I
D(on)
I
IL
I
IH
t
ON
t
OFF
t
D
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
±
0.1
±
0.1
±
0.1
- 0.25
- 20
- 0.25
- 20
- 0.4
- 40
- 0.5
- 0.5
- 0.25
-5
- 0.25
-5
- 0.4
- 10
- 0.5
- 0.5
nA
0.005
0.005
110
100
25
5
68
85
9
9
35
µA
R
L
= 300
,
C
L
= 35 pF
V
S
=
±
10 V, see figure 2
DG413 only, V
S
= 10 V
R
L
= 300
,
C
L
= 35 pF
V
g
= 0 V, R
g
= 0
C
L
= 10 nF
R
L
= 50
C
L
= 5 pF,
f = 1 MHz
ns
pC
dB
pF
I+
I-
I
L
I
GND
V + = 16.5 V, V - = - 16.5 V
V
IN
= 0 V or 5 V
Room
Full
Room
Full
Room
Full
Room
Full
0.0001
- 0.0001
0.0001
- 0.0001
-1
-5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
µA
1
5
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG411, DG412, DG413
Vishay Siliconix
SPECIFICATIONS
a
(for Unipolar Supplies)
Parameter
Analog Switch
V
ANALOG
Analog Signal Range
e
Drain-Source
R
DS(on)
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I-
V + = 13.5 V, V
IN
= 0 V or 5 V
I
L
I
GND
Room
Hot
Room
Hot
Room
Hot
Room
Hot
0.0001
- 0.0001
0.0001
- 0.0001
-1
-5
-1
-5
1
5
-5
1
5
-1
-5
1
5
1
5
µA
t
ON
t
OFF
t
D
Q
Full
V + = 10.8 V,
I
S
= - 10 mA, V
D
=
3
V, 8 V
Room
Full
Room
Hot
Room
Hot
Room
Room
40
12
80
100
250
400
125
140
12
80
100
250
315
125
140
V
Symbol
Test Conditions
Unless Specified
V + = 12 V, V - = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
Min.
d
D Suffix
- 40 °C to 85 °C
Min.
d
Unit
Max.
d
Max.
d
175
95
25
25
R
L
= 300
,
C
L
= 35 pF
V
S
=
8
V, see figure 2
DG413 only, V
S
= 8 V
R
L
= 300
,
C
L
= 35 pF
V
g
= 6 V, R
g
= 0
,
C
L
= 10 nF
ns
pC
Notes:
a.Refer to process option flowchart.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
300
T
A
= 25 °C
±5
V
250
V+ = 3 V
V
L
= 3 V
V
L
= 5 V
R
DS(on)
- Drain-Source On-Resistance (Ω)
45
40
35
30
25
20
15
10
5
0
- 20
±
8V
± 10
V
± 15
V
± 12
V
200
150
V
V+ = 5 V
100
± 20
V
50
8V
12 V
15 V
20 V
0
- 15
- 10
-5
0
5
10
15
20
0
2
4
V
D
- Drain
V
oltage (V)
6
8
10 12 14
V
D
- Drain Voltage (V)
16
18
20
On-Resistance vs. V
D
and Power Supply Voltage
On-Resistance vs. V
D
and Unipolar Supply Voltage
www.vishay.com
4
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG411, DG412, DG413
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
V+ = 15 V
V- = - 15 V
V
L
= 5 V
T
A
= 25 °C
R
DS(on)
- Drain-Source On-Resistance ()
30
20
10
I
S
, I
D
(pA)
0
- 10
- 20
- 30
- 40
- 50
- 60
- 15
- 10
-5
0
5
10
15
V
D
or V
S
- Drain or Source Voltage (V)
I
S(off)
I
D(on)
35
V+ = 15 V
V- = - 15 V
V
L
= 5 V
125 °C
25
85 °C
20
25 °C
15
- 55 °C
10
30
I
D(off)
5
- 15
- 10
-5
0
5
10
15
V
D
- Drain Voltage (V)
Leakage Current vs. Analog Voltage
I
D
, I
S
Leakages vs. Temperature
100
80
60
40
V+ = 15 V
V- = - 15 V
V
L
= 5 V
140
120
100
80
60
C
L
= 10 nF
Q (pC)
V+ = 15 V
V- = - 15 V
V
L
= 5 V
C
L
= 10 nF
Q (pC)
20
0
- 20
- 40
- 60
- 15
C
L
= 1 nF
40
20
0
- 20
- 40
C
L
= 1 nF
- 10
-5
0
5
V
S
- Source Voltage (V)
10
15
- 60
- 15
- 10
-5
0
5
10
15
V
D
- Drain Voltage (V)
Charge Injection vs. Analog Voltage
3.5
3.0
2.5
Charge Injection vs. Analog Voltage
240
210
180
t
ON
, t
OFF
(ns)
V+ = 15 V
V- = - 15 V
V
L
= 5 V
V
S
= 10 V
V
L
= 7.5 V
150
t
ON
120
t
OFF
90
60
30
0
- 55 - 35
V
TH
(V)
2.0
6.5 V
1.5
1.0
0.5
0
5
10
15
20
(V+)
25
30
35
40
4.5 V
5.5 V
- 15
5
25
45
65
85
105 125
Temperature (°C)
Input Switching Threshold vs. Supply Voltage
Switching Time vs. Temperature
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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