2SD571-L datasheet, PDF - EEWORLD Datasheet

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2SD571-L: DescriptionSmall Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size170KB，3 Pages; ManufacturerNEC Electronics

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2SD571-L Overview

Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

2SD571-L Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	NEC Electronics
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.7 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	135
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	110 MHz
Base Number Matches	1

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Description	Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant	compliant	compliant	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	135	90	200	200	50	135	90
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	110 MHz	110 MHz	110 MHz	110 MHz	110 MHz	110 MHz	110 MHz
Base Number Matches	1	1	1	1	1	1	-

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