3.2mm ROUND SOLID STATE LED LAMPS
L174XHT BRIGHT RED
L174XIT HIGH EFFICIENCY RED
L174XSRT SUPER BRIGHT RED
L174XGT GREEN
L174XYT YELLOW
Features
!
LOW
!
WIDE
Description
The Bright Red source color devices are made with Gallium
Phosphide Red Light Emitting Diode.
The High Efficiency Red source color devices are made with
Gallium Arsenide Phosphide on Gallium Phosphide Orange
Light Emitting Diode.
The Green source color devices are made with Gallium
Phosphide Green Light Emitting Diode.
The Yellow source color devices are made with Gallium
Arsenide Phosphide on Gallium Phosphide Yellow Light
Emitting Diode.
The Super Bright Red source color devices are made with
Gallium Aluminum Arsenide Red Light Emitting Diode.
POWER CONSUMPTION.
VIEWING ANGLE.
TAPE FOR AUTOMATIC
!
AVAILABLE ON
MOUNTING MACHINE.
!
LONG
LIFE-SOLID STATE RELIABILITY.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
±0.25(0.01")
unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subject to change without notice.
SPEC NO: CDA0700
APPROVED : J. Lu
REV NO: V.1
CHECKED :
DATE: NOV/11/2001
DRAWN: Z.W.Yan
PAGE: 1 OF 5
Selection Guide
Iv (m c d )
@ 10 m A *20 m A
Min .
L174XHT
L174XIT
L174XGT
L174XYT
L174XSRT
BRIGHT RED (GaP)
HIGH EFFICIENCY RED (GaAsP/GaP)
GREEN (GaP)
YELLOW (GaAsP/GaP)
SUPER BRIGHT RED (GaAlAs)
RED TRANSPARENT
RED TRANSPARENT
GREEN TRANSPARENT
YELLOW TRANSPARENT
RED TRANSPARENT
2
8
8
8
*100
Ty p .
5
30
30
30
*400
V i ew i n g
An g l e
2θ1/2
100°
100°
100°
100°
100°
Par t No .
Dic e
L en s Ty p e
Notes:
1.
θ1/2
is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
2. * Luminous intensity with asterisk is measured at 20mA.
Electrical / Optical Characteristics at T
)
=25°C
°
Sy m b o l
Par am et er
D ev i c e
Bright Red
High Efficiency Red
Green
Yellow
Super Bright Red
Bright Red
High Efficiency Red
Green
Yellow
Super Bright Red
Ty p .
700
627
565
590
660
660
625
568
588
640
45
45
30
35
20
40
15
15
20
45
2.25
2.0
2.2
2.1
1.85
2.5
2.5
2.5
2.5
2.5
10
Max .
Un it s
Tes t Co n d it io n s
λ
peak
Peak Wavelength
nm
IF=20mA
λ
D
Dominate Wavelength
nm
IF=20mA
∆λ
1/2
Bright Red
High Efficiency Red
Spectral Line Halfwidth Green
Yellow
Super Bright Red
Bright Red
High Efficiency Red
Green
Yellow
Super Bright Red
Bright Red
High Efficiency Red
Green
Yellow
Super Bright Red
All
nm
IF=20mA
C
Capacitance
pF
VF=0V;f=1MHz
V
F
Forward Voltage
V
IF=20mA
I
R
Reverse Current
uA
V R = 5V
SPEC NO: CDA0700
APPROVED : J. Lu
REV NO: V.1
CHECKED :
DATE: NOV/11/2001
DRAWN: Z.W.Yan
PAGE: 2 OF 5
Absolute Maximum Ratings at T
)
=25°C
°
Par am et er
Power dissipation
DC Forward Current
Peak Forward Current [1]
Reverse Voltage
Operating/Storage Temperature
Lead Solder Temperature [2]
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 4mm below package base.
B r i g h t R ed
120
25
120
5
Hig h
E f f i c i en c y
R ed
105
30
160
5
Gr een
105
25
14 0
5
Yello w
105
30
140
5
S u p er B r i g h t
R ed
100
30
155
5
Un it s
mW
mA
mA
V
-40
°
C To +85
°C
260
°
C For 5 Seconds
Bright Red L174XHT
SPEC NO: CDA0700
APPROVED : J. Lu
REV NO: V.1
CHECKED :
DATE: NOV/11/2001
DRAWN: Z.W.Yan
PAGE: 3 OF 5
Embedded System
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