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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR623CTC
Thru
SDR626CTC
1/
DESIGNER’S DATA SHEET
CERAMIC TO-254
40A 35nsec 300-600 V
Hyper Fast Centertap Rectifier
Features
:
•
•
•
•
•
•
•
•
•
•
Hyper Fast Recovery: 35nsec Maximum
3/
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach
Ultrasonic Aluminum Wire Bonds
Common Anode and Doubler Versions Available
Flat Leads for Low Inductance
TX, TXV, and S-Level Screening Available
2/
Maximum Ratings
SDR623CTC
SDR624CTC
SDR625CTC
SDR626CTC
Symbol
V
RRM
V
RWM
V
R
Io
I
FSM
T
OP
& T
STG
R
θ
JC
Value
300
400
500
600
40
200
-65 to +200
1.0
2.1
Units
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
4/
(Resistive Load, 60 Hz Sine Wave, T
A
= 25 °C)
Peak Surge Current
5/
(8.3 ms Pulse, Half Sine Wave, T
A
= 25 °C)
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case
4/
Junction to Case
5/
Volts
Amps
Amps
ºC
ºC/W
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I
F
= 0.5 Amp, I
R
= 1.0 Amp, rec. to .25 Amp.
4/ Both Legs Tied Together.
5/ Each Leg.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0125B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR623CTC
Thru
SDR626CTC
Symbol
T
A
= 25 ºC
T
A
= 25 ºC
T
A
= 100 ºC
T
A
= -55 ºC
T
A
= 25 ºC
T
A
= 100 ºC
V
F1
V
F2
V
F3
V
F4
I
R1
I
R2
t
rr
C
J
Electrical Characteristics, per leg
Instantaneous Forward Voltage Drop
(I
F
= 10Adc, Pulse)
(I
F
= 20Adc, Pulse)
Instantaneous Forward Voltage Drop
(I
F
= 10Adc, Pulse)
Reverse Leakage Current
(100% of rated V
R
, Pulse)
Reverse Recovery Time
(I
F
= 0.5A, I
R
= 1A, I
RR
= 0.25A, T
A
= 25ºC)
Junction Capacitance
(V
R
= 10V
DC
, T
A
= 25ºC, f = 1MHz)
Max
1.4
1.6
1.3
1.5
50
5
35
150
Units
V
DC
V
DC
µA
mΑ
nsec
pF
PIN ASSIGNMENT
Configuration
Common Cathode
Common Anode
Doubler
Doubler Reverse
TO-254C
Outline:
Pin 1
Anode 1
Cathode 1
Cathode
Anode
Pin 2
Cathode
Anode
Common
Commo n
Pin 3
Anode 2
Cathode 2
Anode
Cathode
Tolerances, Unless Specified Otherwise - .XX ± .020”
.XXX ± .010”
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0125B
DOC
Microcontroller MCU
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