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KM681000CLG-7L

Description
128K x8 bit Low Power CMOS Static RAM
Categorystorage    storage   
File Size124KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM681000CLG-7L Overview

128K x8 bit Low Power CMOS Static RAM

KM681000CLG-7L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeSOIC
package instruction0.525 INCH, SOP-32
Contacts32
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length20.47 mm
memory density1048576 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP32,.56
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height3 mm
Maximum standby current0.00001 A
Minimum standby current2 V
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width11.43 mm
PRELIMINARY
KM681000C Family
Document Title
128K x8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
0.1
History
Initial draft
First revision
- Seperate read and write at I
CC
, I
CC1
I
CC =
I
CC1
Read : 15mA, Write : 35mA
Finalized
- Add 70ns speed bin for commercial product and 85ns speed
bin for industrial.
Revised
- Improved operating current
Add typical value.
I
CC
Read : 15mA
10mA(Remove write current)
I
CC2
: 90mA
60mA
- Speed bin change
Remove 45ns from commercial part
Remove 55ns and 100ns from industrial part.
Draft Date
November 22, 1995
April 15, 1996
Remark
Design target
Preliminary
1.0
September 5, 1996
Final
2.0
November 5, 1997
Final
The attached data sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0
November 1997
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