NCP382
Fixed Current-Limiting
Power-Distribution
Switches
The NCP382 is a single input dual outputs high side
power−distribution switch designed for applications where heavy
capacitive loads and short−circuits are likely to be encountered. The
device includes an integrated 80 mW, P−channel MOSFET. The
device limits the output current to a desired level by switching into a
constant−current mode when the output load exceeds the current−limit
threshold or a short is present. The current−limit threshold is internally
fixed. The power−switches rise and fall times are controlled to
minimize current ringing during switching.
The FLAG logic output asserts low during overcurrent or
overtemperature conditions. The switch is controlled by a logic enable
input active high or low.
Features
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MARKING
DIAGRAMS
1
DFN8 3x3
CASE 506BW
1
XXXXX
XXXXX
ALYWG
G
8
8
1
SOIC−8 NB
CASE 751
1
XXXXXX
ALYWX
G
•
•
•
•
•
•
•
•
•
2.5 V – 5.5 V Operating Range
80 mW High−Side MOSFET
Current Limit: Fixed 500 mA, 1 A, 1.5 A and 2 A
Undervoltage Lock−Out (UVLO)
Soft−Start Prevents Inrush Current
Thermal Protection
Soft Turn−Off
Enable Active High or Low (EN or EN)
Compliance to IEC61000−4−2 (Level 4)
♦
8.0 kV (Contact)
♦
15 kV (Air)
•
UL Listed
−
File No. E343275
•
IEC60950
−
Edition 2
−
Amendment 1 Certified (CB Scheme)
•
These are Pb−Free Devices
Typical Applications
XXXXX = Specific Device Code
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
•
Laptops
•
USB Ports/Hubs
•
TVs
©
Semiconductor Components Industries, LLC, 2012
February, 2012
−
Rev. 8
1
Publication Order Number:
NCP382/D
NCP382
USB
DATA
D+
D−
USB
VBUS
Port
GND
120
mF
USB
DATA
D+
D−
USB
VBUS
Port
GND
120
mF
USB INPUT
5V
Rfault
100 kW
FLAG1
EN1
FLAG2
EN2
1
mF
IN
OUT1
NCP382
FLAG1
EN1
FLAG2
EN2
GND
OUT2
Figure 1. Typical Application Circuit
GND
IN
EN1
EN2
1
2
3
4
(Top View)
DFN8
8 FLAG1
7 OUT1
6 OUT2
5 FLAG2
GND
IN
EN1
EN2
1
2
3
4
8
7
6
5
FLAG1
OUT1
OUT2
FLAG2
SOIC−8
Figure 2. Pin Connections
PIN FUNCTION DESCRIPTION
Pin Name
EN1
EN2
GND
IN
FLAG1
FLAG2
OUT1
Type
I
I
P
P
O
O
O
Description
Enable 1 input, logic low/high (i.e. EN or EN) turns on power switch.
Enable 2 input, logic low/high (i.e. EN or EN) turns on power switch.
Ground connection.
Power−switch input voltage; connect a 1
mF
or greater ceramic capacitor from IN to GND as close as possible to
the IC.
Active−low open−drain output 1, asserted during overcurrent or overtemperature conditions. Connect a 10 kW or
greater resistor pull−up, otherwise leave unconnected.
Active−low open−drain output 2, asserted during overcurrent or overtemperature conditions. Connect a 10 kW or
greater resistor pull−up, otherwise leave unconnected.
Power−switch output1; connect a 1
mF
ceramic capacitor from OUT1 to GND, as close as possible to the IC.
This minimum value is recommended for USB requirement in terms of load transient response and strong short
circuits.
Power−switch output2; connect a 1
mF
ceramic capacitor from OUT2 to GND, as close as possible to the IC.
This minimum value is recommended for USB requirement in terms of load transient response and strong short
circuits.
OUT2
O
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2
NCP382
MAXIMUM RATINGS
Rating
From IN to OUT1, From IN to OUT2 Supply Voltage (Note 1)
IN, OUT1,OUT2, EN1, EN2, FLAG1, FLAG2 (Note 1)
FLAG1, FLAG2 sink current
ESD Withstand Voltage (IEC 61000−4−2) (output only, when
bypassed with 1.0
mF
capacitor minimum)
Human Body Model (HBM) ESD Rating are (Note 2)
Machine Model (MM) ESD Rating are (Note 2)
Latch−up protection (Note 3)
−
Pins IN, OUT1, OUT2, FLAG1, FLAG2
−
EN1, EN2
Maximum Junction Temperature (Note 4)
Storage Temperature Range
Moisture Sensitivity (Note 5)
Symbol
V
IN ,
V
OUT1
,V
OUT2
V
IN,
V
OUT1,
V
OUT2,
V
EN1,
V
EN2,
V
FLAG1
, V
FLAG2
I
SINK
ESD IEC
ESD HBM
ESD MM
LU
Value
−7.0
to +7.0
−0.3
to +7.0
1.0
15 Air, 8 contact
2000
200
100
−40
to + TSD
−40
to + 150
Level 1
Unit
V
V
mA
kV
V
V
mA
T
J
T
STG
MSL
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. According to JEDEC standard JESD22−A108.
2. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM) +/−2.0 kV per JEDEC standard: JESD22−A114 for all pins.
Machine Model (MM) +/−200 V per JEDEC standard: JESD22−A115 for all pins.
3. Latch up Current Maximum Rating:
$100
mA per JEDEC standard: JESD78 class II.
4. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation.
5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020.
OPERATING CONDITIONS
Symbol
V
IN
V
ENX
T
A
I
SINK
C
IN
C
OUTX
R
qJA
T
J
I
OUTX
P
D
Parameter
Operational Power Supply
Enable Voltage
Ambient Temperature Range
FLAG sink current
Decoupling input capacitor
Decoupling output capacitor
Thermal Resistance Junction−to−Air
USB port per Hub
DFN−8 package (Notes 6 and 7)
SOIC−8 package (Notes 6 and 7)
Junction Temperature Range
Recommended Maximum DC
current
Power Dissipation Rating (Note 8)
T
A
v
25°C
T
A
= 85°C
DFN−8 package
SOIC−8 package
DFN−8 package
SOIC−8 package
DFN−8 package
SOIC−8 package
850
570
428
285
−40
1
120
140
210
25
+125
2
1.5
Conditions
Min
2.5
0
−40
25
Typ
Max
5.5
5.5
+85
1
°C
mA
mF
mF
°C/W
°C/W
°C
A
A
mW
mW
mW
mW
Unit
V
6. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation.
7. The R
qJA
is dependent of the PCB heat dissipation. Announced thermal resistance is the unless PCB dissipation and can be improve with
final PCB layout.
8. The maximum power dissipation (P
D
) is given by the following formula:
T
*
T
P
D
+
JMAX
A
R
qJA
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3
NCP382
ELECTRICAL CHARACTERISTICS
Min & Max Limits apply for T
A
between
−40°C
to +85°C and T
J
up to + 125°C for V
IN
between
2.5 V to 5.5 V (Unless otherwise noted). Typical values are referenced to T
A
= + 25°C and V
IN
= 5 V.
Symbol
POWER SWITCH
R
DS(on)
R
DS(on)
T
R
T
F
Static drain−source on−state resistance
(SOIC−8 Package)
Static drain−source on−state resistance
(DFN8 Package)
Output rise time
Output fall time
T
J
= 25°C, V
IN
= 3.6 V to 5 V
V
IN
= 5 V
V
IN
= 5 V
V
IN
= 5 V
V
IN
= 2.5 V
V
IN
= 5 V
V
IN
= 2.5 V
ENABLE INPUT ENx OR ENx
V
IH
V
IL
I
ENx
T
ON
T
OFF
I
OCP
High−level input voltage
Low−level input voltage
Input current
Turn on time
Turn off time
Current−limit threshold (Maximum DC
output current I
OUTX
delivered to load)
V
IN
= 5 V, Fixed 0.5 A
V
IN
= 5 V, Fixed 1.0 A
V
IN
= 5 V, Fixed 1.5 A
V
IN
= 5 V, Fixed 2 A
T
DET
T
REG
T
OCP
V
UVLO
V
HYST
T
RUVLO
I
INOFF
I
INON
Response time to short circuit
Regulation time
Over current protection time
IN pin low−level input voltage
IN pin hysteresis
Re−arming Time
Low−level output supply current
High−level output supply current
V
IN
rising
T
J
= 25°C
V
IN
rising
V
IN
= 5 V, No load on OUTX, Device OFF
V
ENX
=
0
V or V
ENX
= 5 V
0.5 A
1 and 1.5 A
2A
I
REV
FLAG PIN
V
OL
I
LEAK
T
FLG
T
FOCP
T
SD
T
SDOCP
T
RSD
FLAGX output low voltage
Off−state leakage
FLAGX deglitch
FLAGX deglitch
Thermal shutdown threshold
Thermal regulation threshold
Thermal regulation rearming threshold
I
FLAGX
= 1 mA
V
FLAGX
= 5 V
FLAGX de−assertion time due to
overcurrent
FLAGX assertion due to overcurrent
4
6
0.02
6
8
140
125
115
400
1
9
12
mV
mA
ms
ms
°C
°C
°C
Reverse leakage current
V
OUTX
= 5 V,
V
IN
= 0 V
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
1.0
V
IN
= 5 V
2.0
14
2.0
25
5.0
V
ENx
= 0 V, V
ENx
= 5 V
C
LOAD
= 1
mF,
R
LOAD
= 100
W
(Note 9)
−0.5
1.0
1.0
0.5
1.0
1.5
2
0.6
1.2
1.75
2.25
2.0
3.0
20
2.35
40
10
2.0
4.0
26
2.5
60
15
3.0
95
100
115
125
130
140
2.0
mA
1.2
0.4
0.5
3.0
3.0
0.7
1.4
2.0
2.5
ms
ms
ms
V
mV
ms
mA
mA
V
V
mA
ms
ms
A
–40°C < T
J
< 125°C
80
0.3
0.2
0.1
0.1
1.0
0.65
–40°C < T
J
< 125°C
C
LOAD
= 1
mF,
R
LOAD
= 100
W
(Note 9)
T
J
= 25°C, V
IN
= 3.6 V to 5 V
80
110
140
95
100
1.5
1.0
0.5
0.5
ms
mW
mW
Parameter
Conditions
Min
Typ
Max
Unit
CURRENT LIMIT
UNDERVOLTAGE LOCKOUT
SUPPLY CURRENT
THERMAL SHUTDOWN
9. Parameters are guaranteed for C
LOAD
and R
LOAD
connected to the OUTX pin with respect to the ground.
10. DFN package only.
11. Guaranteed by characterization.
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4
NCP382
VIN
IN
1
mF
OUT1
NCP382
C
LOAD
R
LOAD
OUT2
GND
C
LOAD
R
LOAD
Figure 3. Test Configuration
V
ENx
50%
T
R
T
F
V
ENx
T
OFF
90%
10%
V
OUTx
T
ON
90%
10%
10%
V
OUTx
Figure 4. Voltage Waveform
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5
Embedded System
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