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GS88037BT-200IV

Description
256K x 36 9Mb Sync Burst SRAM
Categorystorage    storage   
File Size525KB,19 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric Compare View All

GS88037BT-200IV Overview

256K x 36 9Mb Sync Burst SRAM

GS88037BT-200IV Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerGSI Technology
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codeunknown
ECCN code3A991.B.2.B
Maximum access time2.5 ns
Other featuresPIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 codeR-PQFP-G100
length20 mm
memory density9437184 bit
Memory IC TypeCACHE SRAM
memory width36
Number of functions1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX36
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
GS88037BT-xxxV
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• Single Cycle Deselect (SCD) operation
• 1.8 V or 2.5 V +10%/–10% core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• RoHS-compliant 100-lead TQFP package available
256K x 36
9Mb Sync Burst SRAM
250 MHz–200 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
SCD Pipelined Reads
The GS88037BT-xxxV is a SCD (Single Cycle Deselect)
pipelined synchronous SRAM. DCD (Dual Cycle Deselect)
versions are also available. SCD SRAMs pipeline deselect
commands one stage less than read commands. SCD RAMs
begin turning off their outputs immediately after the deselect
command has been captured in the input registers.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS88037BT-xxxV operates on a 1.8 V or 2.5 V power
supply. All input are 2.5 V and 1.8 V compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise
from the internal circuits and are 2.5 V and 1.8 V compatible.
Functional Description
Applications
The GS88037BT-xxxV is a 9,437,184-bit (8,388,608-bit for
x32 version) high performance synchronous SRAM with a
2-bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Parameter Synopsis
Pipeline
3-1-1-1
t
KQ
tCycle
Curr
(x36)
-250
2.5
4.0
330
-200
2.5
5.0
270
Unit
ns
ns
mA
Rev: 1.03 6/2006
1/19
© 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS88037BT-200IV Related Products

GS88037BT-200IV GS88037BT-200V GS88037BT-250IV GS88037BT-250V GS88037BT-V GS88037BGT-250V GS88037BGT-250IV GS88037BGT-200V GS88037BGT-200IV
Description 256K x 36 9Mb Sync Burst SRAM 256K x 36 9Mb Sync Burst SRAM 256K x 36 9Mb Sync Burst SRAM 256K x 36 9Mb Sync Burst SRAM 256K x 36 9Mb Sync Burst SRAM 256K x 36 9Mb Sync Burst SRAM 256K x 36 9Mb Sync Burst SRAM 256K x 36 9Mb Sync Burst SRAM 256K x 36 9Mb Sync Burst SRAM
Is it Rohs certified? incompatible incompatible incompatible incompatible - conform to conform to conform to conform to
Maker GSI Technology GSI Technology GSI Technology GSI Technology - GSI Technology GSI Technology GSI Technology GSI Technology
Parts packaging code QFP QFP QFP QFP - QFP QFP QFP QFP
package instruction LQFP, LQFP, LQFP, LQFP, - LQFP, LQFP, LQFP, LQFP,
Contacts 100 100 100 100 - 100 100 100 100
Reach Compliance Code unknown unknown unknown unknown - unknown unknown unknown unknown
ECCN code 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B - 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
Maximum access time 2.5 ns 2.5 ns 2.5 ns 2.5 ns - 2.5 ns 2.5 ns 2.5 ns 2.5 ns
Other features PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY - PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 code R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 - R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
length 20 mm 20 mm 20 mm 20 mm - 20 mm 20 mm 20 mm 20 mm
memory density 9437184 bit 9437184 bit 9437184 bit 9437184 bit - 9437184 bit 9437184 bit 9437184 bit 9437184 bit
Memory IC Type CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM - CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM
memory width 36 36 36 36 - 36 36 36 36
Number of functions 1 1 1 1 - 1 1 1 1
Number of terminals 100 100 100 100 - 100 100 100 100
word count 262144 words 262144 words 262144 words 262144 words - 262144 words 262144 words 262144 words 262144 words
character code 256000 256000 256000 256000 - 256000 256000 256000 256000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 70 °C 85 °C 70 °C - 70 °C 85 °C 70 °C 85 °C
organize 256KX36 256KX36 256KX36 256KX36 - 256KX36 256KX36 256KX36 256KX36
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LQFP LQFP LQFP LQFP - LQFP LQFP LQFP LQFP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE - FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL - PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - 260 260 260 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.6 mm 1.6 mm 1.6 mm 1.6 mm - 1.6 mm 1.6 mm 1.6 mm 1.6 mm
Maximum supply voltage (Vsup) 2 V 2 V 2 V 2 V - 2 V 2 V 2 V 2 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V - 1.7 V 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V - 1.8 V 1.8 V 1.8 V 1.8 V
surface mount YES YES YES YES - YES YES YES YES
technology CMOS CMOS CMOS CMOS - CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL - COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
Terminal form GULL WING GULL WING GULL WING GULL WING - GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.65 mm 0.65 mm 0.65 mm 0.65 mm - 0.65 mm 0.65 mm 0.65 mm 0.65 mm
Terminal location QUAD QUAD QUAD QUAD - QUAD QUAD QUAD QUAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 14 mm 14 mm 14 mm 14 mm - 14 mm 14 mm 14 mm 14 mm

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