IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
220
64
110
Single
D
FEATURES
600
0.16
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
SUPER-247
TM
G
S
D
G
S
N-Channel
MOSFET
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Super-247
TM
IRFPS30N60KPbF
SiHFPS30N60K-E3
IRFPS30N60K
SiHFPS30N60K
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Current
a
T
C
= 25 °C
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery
dV/dt
c
for 10 s
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
30
19
120
3.6
520
30
45
450
13
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T
J
= 25 °C, L = 1.1 mH, R
G
= 25
Ω,
I
AS
= 30 A.
c. I
SD
≤
30 A, dI/dt
≤
630 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91256
S09-0007-Rev. B, 19-Jan-09
www.vishay.com
1
IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case
(Drain)
a
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.24
-
MAX.
40
-
0.28
°C/W
UNIT
Note
a. R
th
is measured at T
J
approximately 90 °C.
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Recovery Current
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
T
J
= 25 °C, I
F
= 30 A, dI/dt = 100 A/µs
b
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
d
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 18 A
b
V
DS
= 50 V, I
D
= 18 A
600
-
3.0
-
-
-
-
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.66
-
-
-
-
0.16
-
5870
530
54
6920
140
270
-
-
-
29
120
56
50
-
-
5.0
± 100
50
250
0.19
-
-
-
-
-
-
-
220
64
110
-
-
-
-
V
V/°C
V
nA
µA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz
V
DS
= 1.0 V , f = 1.0 MHz
V
GS
= 0 V
V
DS
= 480 V , f = 1.0 MHz
V
DS
= 0 V to 480 V
c
V
GS
= 10 V
I
D
= 30 A, V
DS
= 480 V
b
pF
nC
V
DD
= 300 V, I
D
= 30 A,
R
G
= 3.9
Ω,
V
GS
= 10 V
b
ns
-
-
-
-
-
-
-
-
-
640
11
31
30
A
120
1.5
960
16
-
V
ns
µC
A
G
S
T
J
= 25 °C, I
S
= 30 A, V
GS
= 0 V
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
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Document Number: 91256
S09-0007-Rev. B, 19-Jan-09
IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100.0
10
ID, Drain-to-Source Current ( A)
ID, Drain-to-Source Current (A)
T J = 150°C
10.0
1
1.0
T J = 25°C
0.1
5.0V
20μs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
0.1
5.0
6.0
VDS = 50V
20μs PULSE WIDTH
7.0
8.0
9.0
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
ID, Drain-to-Source Current (A)
10
R
DS(on)
, Drain-to-Source On Resistance
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
3.0
I
D
= 30A
2.5
2.0
5.0V
(Normalized)
1.5
1
1.0
20μs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.5
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91256
S09-0007-Rev. B, 19-Jan-09
www.vishay.com
3
IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
1000000
VGS = 0V,
f = 1 MHZ
C iss
= C gs + Cgd ,
SHORTED
Crss = Cgd
Coss = Cds + Cgd
100.0
C ds
100000
ISD, Reverse Drain Current (A)
C, Capacitance (pF)
10.0
TJ = 150°C
10000
Ciss
1000
Coss
100
1.0
Crss
10
1
10
100
1000
T J = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
VGS = 0V
1.2
1.4
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
VSD, Source-toDrain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID= 30A
1000
VDS= 480V
VDS= 300V
VDS= 120V
VGS , Gate-to-Source Voltage (V)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
16
100
12
10
100μsec
8
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
10msec
4
0
0
40
80
120
160
200
240
Q G Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
0.1
1000
10000
V
, Drain-toSource Voltage (V)
Fig. 8 -
DS
Maximum Safe Operating Area
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Document Number: 91256
S09-0007-Rev. B, 19-Jan-09
IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
30
V
DS
V
GS
R
G
R
D
D.U.T.
+
-
V
DD
24
10
V
I
D
, Drain Current (A)
18
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 10a - Switching Time Test Circuit
12
V
DS
6
90
%
0
25
50
75
100
125
150
T
C
, Case Temperature (°C)
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.1
0.20
Thermal Response
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
0.001
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
0.01
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91256
S09-0007-Rev. B, 19-Jan-09
www.vishay.com
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