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RSQ025P03TR

Description
MOSFET P-CH 30V 2.5A TSMT6
CategoryDiscrete semiconductor    The transistor   
File Size85KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RSQ025P03TR Overview

MOSFET P-CH 30V 2.5A TSMT6

RSQ025P03TR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionTSMT6, 6 PIN
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)2.5 A
Maximum drain current (ID)2.5 A
Maximum drain-source on-resistance0.11 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee1
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
RSQ025P03
Transistor
4V Drive Pch MOS FET
RSQ025P03
Structure
Silicon P-channel MOS FET
External dimensions
(Unit : mm)
TSMT6
1.0MAX
0.85
0.7
Features
1) Low On-resistance.(120mΩ at 4.5V)
2) High Power Package.(P
D
=1.25W)
3) High speed switching.
4) Low voltage drive. (4V)
2.9
1.9
0.95 0.95
(6)
(5)
(4)
1.6
2.8
0~0.1
(1)
(2)
(3)
1pin mark
0.4
0.16
Each lead has same dimensions
Abbreviated symbol : TP
Applications
DC-DC converter
Packaging specifications
Package
Type
Taping
TR
3000
Equivalent circuit
(6)
(5)
(4)
Code
Basic ordering unit
(pieces)
∗2
RSQ025P03
∗1
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
(1)DRAIN
(2)DRAIN
(3)GATE
(4)SOURCE
(5)DRAIN
(6)DRAIN
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw
10µs, Duty cycle
1%
2 Mounted on a ceramic board
Symbol
V
DSS
V
GSS
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
1
2
1
Limits
−30
±20
±2.5
±10
−1
−4
1.25
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board.
Symbol
Rth(ch-a)
Limits
100
Unit
°C
/ W
0.3~0.6
Rev.A
1/4
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