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K4S560832D-TL7A

Description
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
File Size99KB，11 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4S560832D-TL7A Overview

32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

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M366S3253DTS
M366S3253DTS SDRAM DIMM
PC133/PC100 Unbuffered DIMM
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
GENERAL DESCRIPTION
1 The Samsung M366S3253DTS is a 32M bit x 64 Synchronous
Dynamic RAM high density memory module. The Samsung
M366S325DCTS consists of eight CMOS 32M x 8 bit with 4banks
Synchronous DRAMs in TSOP-II 400mil package and a 2K
EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy sub-
strate. Two 0.1uF decoupling capacitors are mounted on the
printed circuit board in parallel for each SDRAM.
The M366S325DCTS is a Dual In-line Memory Module and is
intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of
system clock. I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high bandwidth, high
performance memory system applications.
FEATURE
• Performance range
Part No.
M366S3253DTS-L7C/C7C
M366S3253DTS-L7A/C7A
M366S3253DTS-L1H/C1H
M366S3253DTS-L1L/C1L
•
•
•
•
•
Max Freq. (Speed)
133MHz (7.5ns@CL=2)
133MHz (7.5ns@CL=3)
100MHz (6.0ns@CL=2)
100MHz (6.0ns@CL=3)
Burst mode operation
Auto & self refresh capability (8192 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V
±
0.3V power supply
MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the
system clock
• Serial presence detect with EEPROM
• PCB :
Height (1,375mil),
single sided component
PIN CONFIGURATIONS (Front side/back side)
Pin Front Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
V
SS
DQ0
DQ1
DQ2
DQ3
V
DD
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
V
DD
DQ14
DQ15
*CB0
*CB1
V
SS
NC
NC
V
DD
WE
DQM0
Front
Pin Front Pin
Back
V
SS
DQ32
DQ33
DQ34
DQ35
V
DD
DQ36
DQ37
DQ38
DQ39
DQ40
V
SS
DQ41
DQ42
DQ43
DQ44
DQ45
V
DD
DQ46
DQ47
*CB4
*CB5
V
SS
NC
NC
V
DD
CAS
DQM4
Pin
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Back
DQM5
*CS1
RAS
V
SS
A1
A3
A5
A7
A9
BA0
A11
V
DD
*CLK1
A12
V
SS
CKE0
*CS3
DQM6
DQM7
*A13
V
DD
NC
NC
*CB6
*CB7
V
SS
DQ48
DQ49
Pin
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Back
DQ50
DQ51
V
DD
DQ52
NC
*V
REF
NC
V
SS
DQ53
DQ54
DQ55
V
SS
DQ56
DQ57
DQ58
DQ59
V
DD
DQ60
DQ61
DQ62
DQ63
V
SS
*CLK3
NC
**SA0
**SA1
**SA2
V
DD
29 DQM1 57 DQ18 85
58 DQ19 86
CS0
30
59
87
V
DD
31
DU
60 DQ20 88
32
V
SS
61
89
33
A0
NC
62 *V
REF
90
34
A2
63 *CKE1 91
35
A4
64
92
V
SS
36
A6
65 DQ21 93
37
A8
38 A10/AP 66 DQ22 94
67 DQ23 95
39
BA1
68
96
V
SS
40
V
DD
69 DQ24 97
41
V
DD
42 CLK0 70 DQ25 98
71 DQ26 99
43
V
SS
72 DQ27 100
44
DU
73
V
DD
101
45
CS2
46 DQM2 74 DQ28 102
47 DQM3 75 DQ29 103
76 DQ30 104
48
DU
77 DQ31 105
49
V
DD
78
V
SS
106
50
NC
79 CLK2 107
51
NC
NC 108
52 *CB2 80
*WP 109
53 *CB3 81
82 **SDA 110
54
V
SS
55 DQ16 83 **SCL 111
V
DD
112
56 DQ17 84
PIN NAMES
Pin Name
A0 ~ A12
BA0 ~ BA1
DQ0 ~ DQ63
CLK0, CLK2
CKE0
CS0, CS2
RAS
CAS
WE
DQM0 ~ 7
V
DD
V
SS
*V
REF
SDA
SCL
SA0 ~ 2
*WP
DU
NC
Function
Address input (Multiplexed)
Select bank
Data input/output
Clock input
Clock enable input
Chip select input
Row address strobe
Column address strobe
Write enable
DQM
Power supply (3.3V)
Ground
Power supply for reference
Serial data I/O
Serial clock
Address in EEPROM
Write protection
Don′t use
No connection
* These pins are not used in this module.
**
These pins should be NC in the system
which does not support SPD.
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
REV. 0.0 Jan. 2002

K4S560832D-TL7A Related Products

K4S560832D-TL7A K4S560832D-TL1H K4S560832D-TL7C M366S3253DTS K4S560832D-TL1L K4S560832D-TC7A K4S560832D-TC1L K4S560832D-TC1H K4S560832D-TC7C
Description 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
Is it lead-free? - Contains lead Contains lead - Contains lead - Contains lead Contains lead Contains lead
Is it Rohs certified? - incompatible incompatible - incompatible - incompatible incompatible incompatible
Maker - SAMSUNG SAMSUNG - SAMSUNG - SAMSUNG SAMSUNG SAMSUNG
Parts packaging code - TSOP2 TSOP2 - TSOP2 - TSOP2 TSOP2 TSOP2
package instruction - TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 - TSOP2, TSOP54,.46,32 - TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32
Contacts - 54 54 - 54 - 54 54 54
Reach Compliance Code - unknow compliant - unknow - unknow unknow compli
ECCN code - EAR99 EAR99 - EAR99 - EAR99 EAR99 EAR99
access mode - FOUR BANK PAGE BURST FOUR BANK PAGE BURST - FOUR BANK PAGE BURST - FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time - 6 ns 5.4 ns - 6 ns - 6 ns 6 ns 5.4 ns
Other features - AUTO/SELF REFRESH AUTO/SELF REFRESH - AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) - 100 MHz 133 MHz - 100 MHz - 100 MHz 100 MHz 133 MHz
I/O type - COMMON COMMON - COMMON - COMMON COMMON COMMON
interleaved burst length - 1,2,4,8 1,2,4,8 - 1,2,4,8 - 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 code - R-PDSO-G54 R-PDSO-G54 - R-PDSO-G54 - R-PDSO-G54 R-PDSO-G54 R-PDSO-G54
JESD-609 code - e0 e0 - e0 - e0 e0 e0
length - 22.22 mm 22.22 mm - 22.22 mm - 22.22 mm 22.22 mm 22.22 mm
memory density - 268435456 bi 268435456 bit - 268435456 bi - 268435456 bi 268435456 bi 268435456 bi
Memory IC Type - SYNCHRONOUS DRAM SYNCHRONOUS DRAM - SYNCHRONOUS DRAM - SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width - 8 8 - 8 - 8 8 8
Number of functions - 1 1 - 1 - 1 1 1
Number of ports - 1 1 - 1 - 1 1 1
Number of terminals - 54 54 - 54 - 54 54 54
word count - 33554432 words 33554432 words - 33554432 words - 33554432 words 33554432 words 33554432 words
character code - 32000000 32000000 - 32000000 - 32000000 32000000 32000000
Operating mode - SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature - 70 °C 70 °C - 70 °C - 70 °C 70 °C 70 °C
organize - 32MX8 32MX8 - 32MX8 - 32MX8 32MX8 32MX8
Output characteristics - 3-STATE 3-STATE - 3-STATE - 3-STATE 3-STATE 3-STATE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - TSOP2 TSOP2 - TSOP2 - TSOP2 TSOP2 TSOP2
Encapsulate equivalent code - TSOP54,.46,32 TSOP54,.46,32 - TSOP54,.46,32 - TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32
Package shape - RECTANGULAR RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED 240
power supply - 3.3 V 3.3 V - 3.3 V - 3.3 V 3.3 V 3.3 V
Certification status - Not Qualified Not Qualified - Not Qualified - Not Qualified Not Qualified Not Qualified
refresh cycle - 8192 8192 - 8192 - 8192 8192 8192
Maximum seat height - 1.2 mm 1.2 mm - 1.2 mm - 1.2 mm 1.2 mm 1.2 mm
self refresh - YES YES - YES - YES YES YES
Continuous burst length - 1,2,4,8,FP 1,2,4,8,FP - 1,2,4,8,FP - 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current - 0.002 A 0.002 A - 0.002 A - 0.002 A 0.002 A 0.002 A
Maximum slew rate - 0.19 mA 0.22 mA - 0.19 mA - 0.19 mA 0.19 mA 0.22 mA
Maximum supply voltage (Vsup) - 3.6 V 3.6 V - 3.6 V - 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) - 3 V 3 V - 3 V - 3 V 3 V 3 V
Nominal supply voltage (Vsup) - 3.3 V 3.3 V - 3.3 V - 3.3 V 3.3 V 3.3 V
surface mount - YES YES - YES - YES YES YES
technology - CMOS CMOS - CMOS - CMOS CMOS CMOS
Temperature level - COMMERCIAL COMMERCIAL - COMMERCIAL - COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - GULL WING GULL WING - GULL WING - GULL WING GULL WING GULL WING
Terminal pitch - 0.8 mm 0.8 mm - 0.8 mm - 0.8 mm 0.8 mm 0.8 mm
Terminal location - DUAL DUAL - DUAL - DUAL DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width - 10.16 mm 10.16 mm - 10.16 mm - 10.16 mm 10.16 mm 10.16 mm

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