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ZSSC3123AA1B

Description
Integrated Device Technology Wafer (unsawn) - box
File Size699KB,63 Pages
ManufacturerIDT (Integrated Device Technology)
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Integrated Device Technology Wafer (unsawn) - box

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Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerIDT (Integrated Device Technology)
Product CategoryIntegrated Device Technology
cLite
TM
Capacitive Sensor
Signal Conditioner
ZSSC3123
Datasheet
Brief Description
The ZSSC3123 is a CMOS integrated circuit for accurate
capacitance-to-digital conversion and sensor-specific
correction of capacitive sensor signals. Digital compen-
sation of sensor offset, sensitivity, and temperature drift is
accomplished via an internal digital signal processor
running a correction algorithm with calibration coefficients
stored in a non-volatile EEPROM.
The ZSSC3123 is configurable for capacitive sensors with
capacitances up to 260pF and a sensitivity of 125aF/LSB
to 1pF/LSB depending on resolution, speed, and range
settings. It is compatible with both single capacitive
sensors (both terminals must be accessible) and
differential capacitive sensors. Measured and corrected
2
sensor values can be output as I C
*, SPI, PDM, or
alarms.
2
The I C™ interface can be used for a simple PC-controlled
calibration procedure to program a set of calibration
coefficients into an on-chip EEPROM. The calibrated
ZSSC3123 and a specific sensor are mated digitally: fast,
precise, and without the cost overhead of trimming by
external devices or laser.
Benefits
Minimized calibration costs: no laser trimming, one-
pass calibration using a digital interface
Wide capacitance range to support a broad portfolio of
different sensor elements
Excellent for low-power battery applications
Interfaces
I²C™ or SPI interface—easy connection to a µC
PDM outputs (Filtered Analog Ratiometric) for both
capacitance and temperature
Up to two alarms that can act as full push-pull or open-
drain switches
Physical Characteristics
Supply voltage: 2.3V to 5.5V
Typical current consumption 650μA down to 60μA
depending on configuration
Typical Sleep Mode current: ≤ 1μA at 85°C
Operation temperature: –40°C to +125°C
Die or TSSOP14 package
Features
Maximum target input capacitance: 260pF
Sampling rates as fast as 0.7ms at 8-bit resolution;
1.6ms at 10-bit; 5.0ms at 12-bit; 18.5ms at 14-bit
Digital compensation of sensor: piece-wise 1 and 2
rd
order sensor compensation or up to 3 order single-
region sensor compensation
st
nd
Digital compensation of 1 and 2 order temperature
gain and offset drift
Internal temperature compensation reference
(no external components)
Programmable capacitance span and offset
Layout customized for die-die bonding with sensor for
low-cost, high-density chip-on-board assembly
Accuracy as high as
±0.25% FSO@ -40 to 125°C, 3V, 5V, Vsupply ±10%
st
nd
Available Support
ZSSC3123 SSC Evaluation Kit available: SSC
Evaluation Board, samples, software, documentation.
Support for industrial mass calibration available.
Quick circuit customization option for large production
volumes.
Application: Digital Output, Alarms
V
SUPPLY
(2.3V to 5.5V)
VDD
cLite
ZSSC3123
Ready
0.1µF
0.1µF
Vcore
VSS
SDA/MISO
SCL/SCLK
GND
C0
SS
Alarm_High
CC
Alarm_Low
*
I
2
C™ is a registered trademark of NXP.
† See data sheet section 1.3 for restrictions.
© 2016 Integrated Device Technology, Inc.
1
January 26, 2016

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Product Attribute Attribute Value Attribute Value Attribute Value -
Manufacturer IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) -
Product Category Integrated Device Technology Sensor Interface Sensor Interface -

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