Power Transistors
2SA2118
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
■
Features
•
Satisfactory linearity of forward current transfer ratio h
FE
•
Dielectric breakdown voltage of the package: 5 kV
•
Full-pack package which can be installed to the heat sink with one
screw.
9.9
±0.3
Unit: mm
4.6
±0.2
2.9
±0.2
13.7
±0.2
4.2
±0.2
Solder Dip
15.0
±0.5
φ
3.2
±0.1
1.4
±0.2
1.6
±0.2
0.8
±0.1
3.0
±0.5
2.6
±0.1
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
a
=
25°C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
−200
−180
−6
−2
−3
25
2.0
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
0.55
±0.15
2.54
±0.30
5.08
±0.50
1
2
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
V
BE
I
CBO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
Conditions
I
C
= −50 µA,
I
E
=
0
I
C
= −5
mA, I
B
=
0
I
E
= −500 µA,
I
C
=
0
V
CE
= −10
V, I
C
= −400
mA
V
CB
= −200
V, I
E
=
0
V
EB
= −4
V, I
C
=
0
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −10
V, I
C
= −400
mA
I
C
= −500
mA, I
B
= −50
mA
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
30
60
50
−1
V
MHz
Min
−200
−180
−6
−1
−50
−50
240
Typ
Max
Unit
V
V
V
V
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
60 to 140
P
100 to 240
Publication date: July 2004
SJD00315AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
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hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
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•
Any applications other than the standard applications intended.
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tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
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Even when the products are used within the guaranteed values, take into the consideration of incidence of
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2003 SEP
Microcontroller MCU
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